Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MMFTP84K-AQMOSFET, SOT-23, -60V, -0.18A, 0 |
3,115 | - |
|
Tape & Reel (TR) | - | Active | P-Channel | - | - | 180mA | - | - | - | - | - | - | - | 250mW | - | ||
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DI008N09SQMOSFET, SO-8, 90V, 8A, 0, 2W |
3,447 | - |
|
Tape & Reel (TR) | - | Active | N-Channel | - | - | 8A | - | - | - | - | - | - | - | 2W | - | Surface Mount | |
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FDG316PSMALL SIGNAL FIELD-EFFECT TRANSI |
2,686 | - |
|
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Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.6A (Ta) | 4.5V, 10V | 190mOhm @ 1.6A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 165 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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PMV33UPE,215PMV33UPE - 20 V, SINGLE P-CHANNE |
2,603 | - |
|
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.8V, 4.5V | 36mOhm @ 3A, 4.5V | 950mV @ 250µA | 22.1 nC @ 4.5 V | ±8V | 1820 pF @ 10 V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50N04S4-08IPD50N04 - 20V-40V N-CHANNEL AUT |
2,958 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS2572POWER FIELD-EFFECT TRANSISTOR, 4 |
2,981 | - |
|
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.9A (Tc) | 10V | 47mOhm @ 4.9A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 2870 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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RFP40N10_F10240A, 100V, 0.04OHM, N-CHANNEL PO |
2,030 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BUK766R0-60E,118MOSFET N-CH 60V 75A D2PAK |
3,208 | - |
|
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 6mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±20V | 4520 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NTD24N06LT4GPOWER FIELD-EFFECT TRANSISTOR, 2 |
3,949 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta) | 5V | 45mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 1140 pF @ 25 V | - | 1.36W (Ta), 62.5W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK7Y18-55B,115NOW NEXPERIA BUK7Y18-55B - 47.4A |
2,122 | - |
|
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 47.4A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 21.9 nC @ 10 V | ±20V | 1263 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK7Y65-100EXTRANSISTOR >30MHZ |
2,762 | - |
|
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDV302PSMALL SIGNAL FIELD-EFFECT TRANSI |
3,445 | - |
|
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 25 V | 120mA (Ta) | 2.7V, 4.5V | 10Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31 nC @ 4.5 V | -8V | 11000 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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2SJ463A-T1-A2SJ463A - P-CHANNEL MOSFET |
2,940 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRLH6224TRPBFMOSFET N-CH 20V 28A/105A 8PQFN |
2,363 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86 nC @ 10 V | ±12V | 3710 pF @ 10 V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NTK3139PT1HPOWER FIELD-EFFECT TRANSISTOR |
2,996 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRLR7833PBFMOSFET N-CH 30V 140A DPAK |
3,891 | - |
|
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQPF13N06LPOWER FIELD-EFFECT TRANSISTOR, 1 |
2,468 | - |
|
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Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 5V, 10V | 110mOhm @ 5A, 10V | 2.5V @ 250µA | 6.4 nC @ 5 V | ±20V | 350 pF @ 25 V | - | 24W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BSC030N03LSGOriginal and genuine |
8,500 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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PSMN6R1-25MLD,115PSMN6R1-25MLD - N-CHANNEL 25V, L |
3,924 | - |
|
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FQPF7N65CPOWER FIELD-EFFECT TRANSISTOR, 7 |
3,622 | - |
|
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |