Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFL38N100PMOSFET N-CH 1000V 29A I5PAK |
2,057 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 29A (Tc) | 10V | 230mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFN150N10MOSFET N-CH 100V 150A SOT-227 |
2,010 | - |
|
![]() Datenblatt |
Bulk | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTH3N200P3HVMOSFET N-CH 2000V 3A TO247 |
3,878 | - |
|
![]() Datenblatt |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 3A (Tc) | 10V | 8Ohm @ 1.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±20V | 1860 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFL34N100MOSFET N-CH 1000V 30A ISOPLUS264 |
3,361 | - |
|
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 280mOhm @ 30A, 10V | 5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 550W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT8024LFLLGMOSFET N-CH 800V 31A TO264 |
3,170 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 260mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | ±30V | 4670 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT38M50JMOSFET N-CH 500V 38A ISOTOP |
3,768 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXFN48N60PMOSFET N-CH 600V 40A SOT227B |
3,332 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 140mOhm @ 4A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8860 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT26F120LMOSFET N-CH 1200V 27A TO264 |
3,353 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT50M65LLLGMOSFET N-CH 500V 67A TO264 |
2,769 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT26F120B2MOSFET N-CH 1200V 27A T-MAX |
3,787 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFL132N50P3MOSFET N-CH 500V 63A ISOPLUS264 |
3,659 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTT4N150HV-TRLMOSFET N-CH 1500V 4A TO268HV |
2,626 | - |
|
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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APT51M50JMOSFET N-CH 500V 51A ISOTOP |
3,770 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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APT50M65B2FLLGMOSFET N-CH 500V 67A T-MAX |
2,972 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT50M65LFLLGMOSFET N-CH 500V 67A TO264 |
3,550 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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GA10SICP12-263TRANS SJT 1200V 25A D2PAK |
2,833 | - |
|
![]() Datenblatt |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
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APT30F60JMOSFET N-CH 600V 31A ISOTOP |
3,517 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTR120P20TMOSFET P-CH 200V 90A ISOPLUS247 |
3,084 | - |
|
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 32mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 73000 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTR210P10TMOSFET P-CH 100V 195A ISOPLUS247 |
2,870 | - |
|
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 8mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFN26N90MOSFET N-CH 900V 26A SOT-227B |
3,100 | - |
|
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |