Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPW47N60CFDFKSA1MOSFET N-CH 600V 46A TO247-3 |
2,419 | - |
|
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 83mOhm @ 29A, 10V | 5V @ 2.9mA | 322 nC @ 10 V | ±20V | 7700 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT22F120LMOSFET N-CH 1200V 23A TO264 |
3,967 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT30M70BVFRGMOSFET N-CH 300V 48A TO247 |
3,488 | - |
|
![]() Datenblatt |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 48A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 5870 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFX120N20MOSFET N-CH 200V 120A PLUS247 |
2,185 | - |
|
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 4V @ 8mA | 300 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFX180N10MOSFET N-CH 100V 180A PLUS247 |
2,460 | - |
|
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 390 nC @ 10 V | ±20V | 10900 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFX150N15MOSFET N-CH 150V 150A PLUS247 |
3,744 | - |
|
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 12.5mOhm @ 75A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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S2M0080120KMOSFET SILICON CARBIDE SIC 1200V |
3,343 | - |
|
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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IXFR24N90PMOSFET N-CH 900V 13A ISOPLUS247 |
3,480 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 13A (Tc) | 10V | 460mOhm @ 12A, 10V | 6.5V @ 1mA | 130 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SPW47N65C3FKSA1MOSFET N-CH 650V 47A TO247-3 |
3,372 | - |
|
![]() Datenblatt |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 255 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFR102N30PMOSFET N-CH 300V 60A ISOPLUS247 |
2,420 | - |
|
![]() Datenblatt |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 36mOhm @ 51A, 10V | 5V @ 4mA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFR180N15PMOSFET N-CH 150V 100A ISOPLUS247 |
3,985 | - |
|
![]() Datenblatt |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 10V | 13mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STWA40N90K5MOSFET N-CH 900V 40A TO247 |
2,662 | - |
|
![]() Datenblatt |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 99mOhm @ 20A, 10V | 5V @ 100µA | 89 nC @ 10 V | ±30V | 3260 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT8052BFLLGMOSFET N-CH 800V 15A TO247 |
3,359 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | - | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | - | 2035 pF @ 25 V | - | - | - | Through Hole |
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APT8056BVRGMOSFET N-CH 800V 16A TO247 |
2,806 | - |
|
![]() Datenblatt |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | - | 560mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
|
APT56M60LMOSFET N-CH 600V 60A TO264 |
3,953 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT84F50LMOSFET N-CH 500V 84A TO264 |
3,348 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT5014SLLGMOSFET N-CH 500V 35A D3PAK |
2,882 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 3261 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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LSIC1MO120G0080MOSFET SIC 1200V 25A TO247-4L |
2,363 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 92 nC @ 20 V | +22V, -6V | 170 pF @ 800 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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APT10090BFLLGMOSFET N-CH 1000V 12A TO247 |
3,172 | - |
|
![]() Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 950mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT56M60B2MOSFET N-CH 600V 60A TO247 |
2,770 | - |
|
![]() Datenblatt |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 130mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |