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Transistoren von FETs, MOSFETs von Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSO051N03MS GMOSFET N-CH 30V 14A 8DSO |
2,178 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 5.1mOhm @ 18A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RQA0008RXDQS#H1RQA0008 - N-CHANNEL POWER MOSFET |
40,000 | - |
|
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 2.4A (Ta) | - | - | 800mV @ 1mA | - | ±5V | 44 pF @ 0 V | - | 10W (Tc) | 150°C | Surface Mount | |
|
G45P02D3P20V,RD(MAX)<9.5M@-4.5V,RD(MAX)< |
4,908 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 45A | - | 9.5mOhm @ 10A, 4.5V | 1V @ 250µA | 55 nC @ 4.5 V | ±12V | 3500 pF @ 10 V | - | 80W | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJD35N06A_L2_0000160V N-CHANNEL ENHANCEMENT MODE M |
2,830 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.7A (Ta), 35A (Tc) | 4.5V, 10V | 21mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 20 V | - | 1.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
PJL9436A_R2_0000160V N-CHANNEL ENHANCEMENT MODE M |
2,490 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.5A (Ta) | 4.5V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IRF7326D2TRPBFMOSFET P-CH 30V 3.6A 8SO |
2,125 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | FETKY™ | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25 nC @ 10 V | ±20V | 440 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ4402P_R2_0000130V N-CHANNEL ENHANCEMENT MODE M |
4,991 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 3.8mOhm @ 10A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | ±20V | 2436 pF @ 25 V | - | 2W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
PJD14P06A-AU_L2_000A160V P-CHANNEL ENHANCEMENT MODE M |
2,990 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.2A (Ta), 14A (Tc) | 4.5V, 10V | 110mOhm @ 6A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 785 pF @ 30 V | - | 2W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
G15N10CN100V,RD(MAX)<110M@10V,RD(MAX)<1 |
2,473 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 110mOhm @ 8A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | - | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G23N06KN60V,RD(MAX)<35M@10V,RD(MAX)<45M |
2,396 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A | - | 35mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 590 pF @ 15 V | - | 38W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G15P04KP40V,RD(MAX)<39M@-10V,RD(MAX)<70 |
2,108 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 15A | - | 39mOhm @ 10A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 930 pF @ 20 V | - | 50W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
PJL9415_R2_0000130V P-CHANNEL ENHANCEMENT MODE M |
2,470 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 9.5mOhm @ 12A, 10V | 2.5V @ 250µA | 26 nC @ 4.5 V | ±20V | 3168 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
PSMN8R5-100ESQNEXPERIA PSMN8R5-100ESQ - 100A |
36,808 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 5512 pF @ 50 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | |
|
BSR315PH6327XTSA1MOSFET P-CH 60V 620MA SC59 |
5,000 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 620mA (Ta) | 4.5V, 10V | 800mOhm @ 620mA, 10V | 2V @ 160µA | 6 nC @ 10 V | ±20V | 176 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ5458A-AU_R2_000A160V N-CHANNEL ENHANCEMENT MODE M |
1,193 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.4A (Ta), 16A (Tc) | 4.5V, 10V | 50mOhm @ 8A, 10A | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 815 pF @ 15 V | - | 2.4W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
BSO083N03MSGXUMA1MOSFET N-CH 30V 11A 8DSO |
2,232 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 8.3mOhm @ 14A, 10V | 2V @ 250µA | 27 nC @ 10 V | ±20V | 2100 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
2SK4150TZ-E2SK4150TZ - N-CHANNEL POWER MOSF |
19,000 | - |
|
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 400mA (Ta) | 2.5V, 4V | 5.7Ohm @ 200mA, 4V | 1.5V @ 1mA | 3.7 nC @ 4 V | ±10V | 80 pF @ 25 V | - | 750mW (Ta) | 150°C | Through Hole | |
|
|
PJQ4401P_R2_0000130V P-CHANNEL ENHANCEMENT MODE M |
4,975 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | ±20V | 3228 pF @ 15 V | - | 2W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
PJQ4443P_R2_0000140V P-CHANNEL ENHANCEMENT MODE M |
3,600 | - |
|
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8.8A (Ta), 46A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | ±20V | 2767 pF @ 25 V | - | 2.1W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
IRF530APOWER FIELD-EFFECT TRANSISTOR, 1 |
1,966 | - |
|
Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 110mOhm @ 7A, 10V | 4V @ 250µA | 36 nC @ 10 V | - | 790 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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