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Transistoren von FETs, MOSFETs von Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CMS25N03V8A-HFMOSFET |
2,175 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
CMS03P06T6-HFMOSFET |
2,480 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
CMS01P10TA-HFMOSFET |
3,876 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NTMTS0D4N04CLTXGMOSFET N-CH 40V 79.8A 8DFNW |
3,560 | - |
|
Datenblatt |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 79.8A (Ta), 553.8A (Tc) | 4.5V, 10V | 0.4mOhm @ 50A, 10V | 2.5V @ 250µA | 341 nC @ 10 V | ±20V | 20600 pF @ 20 V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXFH15N60MOSFET N-CH 600V 15A TO-247AD |
2,338 | - |
|
Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FCH47N60-F085MOSFET N-CH 600V 47A TO247-3 |
3,012 | - |
|
Datenblatt |
Tube,Tube | Automotive, AEC-Q101, SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 79mOhm @ 47A, 10V | 5V @ 250µA | 250 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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|
IXFR4N100QMOSFET N-CH 1000V 3.5A ISOPLS247 |
2,043 | - |
|
Datenblatt |
Box | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.5A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NVHL060N090SC1SICFET N-CH 900V 46A TO247-3 |
3,178 | - |
|
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
STWA63N65DM2MOSFET N-CH 650V 60A TO247 |
3,764 | - |
|
Datenblatt |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXFH20N60MOSFET N-CH 600V 20A TO-247AD |
3,286 | - |
|
Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 350mOhm @ 10A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT10M25BVRGMOSFET N-CH 100V 75A TO247 |
3,136 | - |
|
Datenblatt |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 25mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Through Hole |
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|
IXTH360N055T2MOSFET N-CH 55V 360A TO247 |
3,822 | - |
|
Datenblatt |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 360A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
APT1003RSLLGMOSFET N-CH 1000V 4A D3PAK |
3,705 | - |
|
Datenblatt |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | - | 694 pF @ 25 V | - | - | - | Surface Mount |
|
IXFT70N65X3HVMOSFET 70A 650V X3 TO268HV |
3,056 | - |
|
Tube | HiPerFET™, Ultra X3 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NTC080N120SC1SIC MOS WAFER SALES 80MOHM 1200V |
2,166 | - |
|
Datenblatt |
Tray | - | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1112 pF @ 800 V | - | 178W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXTK170N10PMOSFET N-CH 100V 170A TO264 |
3,661 | - |
|
Datenblatt |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
STW75N60M6MOSFET N-CH 600V 72A TO247 |
3,806 | - |
|
Datenblatt |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4850 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXFJ20N85XMOSFET N-CH 850V 9.5A ISO TO247 |
2,050 | - |
|
Datenblatt |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 9.5A (Tc) | 10V | 360mOhm @ 10A, 10V | 5.5V @ 2.5mA | 63 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXKC20N60CMOSFET N-CH 600V 15A ISOPLUS220 |
2,829 | - |
|
Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 190mOhm @ 16A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTF200N10TMOSFET N-CH 100V 90A I4PAC |
3,994 | - |
|
Datenblatt |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 7mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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