Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IXFA76N15T2MOSFET N-CH 150V 76A TO263AA |
3,676 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 76A (Tc) | 10V | 20mOhm @ 38A, 10V | 4.5V @ 250µA | 97 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STP13NK60ZFPMOSFET N-CH 600V 13A TO220FP |
2,494 | - |
|
![]() Datenblatt |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 550mOhm @ 4.5A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFS4127TRLMOSFET N-CH 200V 72A D2PAK |
3,428 | - |
|
![]() Datenblatt |
Tape & Reel (TR) | Automotive, AEC-Q101, HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRL60SL216MOSFET N-CH 60V 195A TO262-3 |
893 | - |
|
![]() Datenblatt |
Tube | HEXFET®, StrongIRFET™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255 nC @ 4.5 V | ±20V | 15330 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH34N50P3MOSFET N-CH 500V 34A TO247AD |
297 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 34A (Tc) | 10V | 170mOhm @ 17A, 10V | 5V @ 4mA | 60 nC @ 10 V | ±30V | 3260 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FCB36N60NTMMOSFET N-CH 600V 36A D2PAK |
660 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NVBLS0D5N04CTXGMOSFET N-CH 40V 65A/300A 8HPSOF |
1,990 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65A (Ta), 300A (Tc) | - | 0.57mOhm @ 50A, 10V | 4V @ 475µA | 185 nC @ 10 V | +20V, -16V | 12600 pF @ 25 V | - | 4.3W (Ta), 198.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STWA45N65M5MOSFET N-CH 650V 35A TO247 |
349 | - |
|
![]() Datenblatt |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 78mOhm @ 17.5A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±25V | 3470 pF @ 100 V | - | 210W (Tc) | 150°C (TJ) | Through Hole |
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NVB082N65S3FMOSFET N-CH 650V 40A D2PAK-3 |
573 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NTBLS0D7N06CMOSFET N-CH 60V 54A/470A 8HPSOF |
1,018 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 54A (Ta), 470A (Tc) | 6V, 10V | 0.75mOhm @ 80A, 10V | 4V @ 661µA | 170 nC @ 10 V | ±20V | 13730 pF @ 30 V | - | 4.2W (Ta), 314W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STWA48N60M2MOSFET N-CH 600V 42A TO247 |
207 | - |
|
![]() Datenblatt |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 70mOhm @ 21A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±25V | 3060 pF @ 100 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW32N65M5MOSFET N-CH 650V 24A TO247-3 |
506 | - |
|
![]() Datenblatt |
Tube | MDmesh™ V | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±25V | 3320 pF @ 100 V | - | 150W (Tc) | 150°C (TJ) | Through Hole |
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IXFQ22N60P3MOSFET N-CH 600V 22A TO3P |
285 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 360mOhm @ 11A, 10V | 5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TPH3206PSBGANFET N-CH 650V 16A TO220AB |
505 | - |
|
![]() Datenblatt |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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R6035KNZ4C13MOSFET N-CH 600V 35A TO247 |
600 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 379W (Tc) | 150°C (TJ) | Through Hole |
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STF35N65M5MOSFET N-CH 650V 27A TO220FP |
468 | - |
|
![]() Datenblatt |
Tube | MDmesh™ V | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 98mOhm @ 13.5A, 10V | 5V @ 250µA | 83 nC @ 10 V | ±25V | 3750 pF @ 100 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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TPH3208PSGANFET N-CH 650V 20A TO220AB |
572 | - |
|
![]() Datenblatt |
Tube | - | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFQ50N50P3MOSFET N-CH 500V 50A TO3P |
192 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 120mOhm @ 25A, 10V | 5V @ 4mA | 85 nC @ 10 V | ±30V | 4335 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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TPH3208LDGGANFET N-CH 650V 20A 3PQFN |
158 | - |
|
![]() Datenblatt |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SCTWA10N120IC POWER MOSFET 1200V HIP247 |
500 | - |
|
![]() Datenblatt |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA (Typ) | 21 nC @ 20 V | +25V, -10V | 300 pF @ 1000 V | - | 110W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |