Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHS36N50D-GE3D SERIES POWER MOSFET SUPER-247 |
3,057 | - |
|
![]() Datenblatt |
Tube | D | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 130mOhm @ 18A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±30V | 3233 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | |
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RJK1525DPP-MG#T2N-CHANNEL POWER MOSFET |
1,582 | - |
|
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IXFP26N50P3MOSFET N-CH 500V 26A TO220AB |
139 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5V @ 4mA | 42 nC @ 10 V | ±30V | 2220 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RJK1536DPE-00#J3N-CHANNEL POWER MOSFET |
88,000 | - |
|
![]() Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RFG75N05EN-CHANNEL POWER MOSFET |
18,695 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH30N50PMOSFET N-CH 500V 30A TO247AD |
187 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±30V | 4150 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UF3SC065040B7S650V/40MOHM, SIC, STACKED FAST C |
3,190 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 43A (Tc) | 12V | 52mOhm @ 30A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NTE2383MOSFET P-CH 100V 10.5A TO220 |
104 | - |
|
![]() Datenblatt |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 10.5A (Tc) | 10V | 300mOhm @ 5.3A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 835 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG65R057M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
1,000 | - |
|
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IXFH46N65X3MOSFET 46A 650V X3 TO247 |
550 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 73mOhm @ 23A, 10V | 5.2V @ 2.5mA | 40 nC @ 10 V | ±20V | 2730 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQA160N08MOSFET N-CH 80V 160A TO3PN |
252 | - |
|
![]() Datenblatt |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 160A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±25V | 7900 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP65R060CFD7XKSA1650V FET COOLMOS TO247 |
980 | - |
|
![]() Datenblatt |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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R6547ENZ4C13650V 47A TO-247, LOW-NOISE POWER |
509 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 80mOhm @ 25.8A, 10V | 4V @ 1.72mA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 480W (Tc) | 150°C (TJ) | Through Hole |
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TW107N65C,S1FG3 650V SIC-MOSFET TO-247 107MO |
125 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | 175°C | Through Hole |
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IMBG120R090M1HXTMA1SICFET N-CH 1.2KV 26A TO263 |
1,861 | - |
|
![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | - | 125mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 23 nC @ 18 V | +18V, -15V | 763 pF @ 800 V | Standard | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFP27N60KPBFMOSFET N-CH 600V 27A TO247-3 |
5,085 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 220mOhm @ 16A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFH48N60X3MOSFET ULTRA JCT 600V 48A TO247 |
253 | - |
|
![]() Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 2.5mA | 38 nC @ 10 V | ±20V | 2730 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTE2375MOSFET N-CHANNEL 100V 41A TO247 |
216 | - |
|
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTP60N20X4MOSFET ULTRA X4 200V 60A TO-220 |
380 | - |
|
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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2N6792TX2A, 400V, 1.8OHM, N-CHANNEL |
335 | - |
|
![]() Datenblatt |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |