Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIHU3N50D-E3MOSFET N-CH 500V 3A TO251AA |
3,124 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3A (Tc) | 10V | 3.2Ohm @ 2.5A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 175 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SI7726DN-T1-GE3MOSFET N-CH 30V 35A PPAK1212-8 |
2,906 | - |
|
Datasheet |
Tape & Reel (TR) | SkyFET®, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.6V @ 250µA | 43 nC @ 10 V | ±20V | 1765 pF @ 15 V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | |
SIR403EDP-T1-GE3MOSFET P-CH 30V 40A PPAK SO-8 |
2,763 | - |
|
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 13A, 10V | 2.8V @ 250µA | 153 nC @ 10 V | ±25V | 4620 pF @ 15 V | - | 5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SUP50010E-GE3MOSFET N-CH 60V 150A TO220AB |
495 | - |
|
Datasheet |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 150A (Tc) | 7.5V, 10V | 2mOhm @ 30A, 10V | 4V @ 250µA | 212 nC @ 10 V | ±20V | 10895 pF @ 30 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
SIHG186N60EF-GE3MOSFET N-CH 600V 8.4A TO247AC |
453 | - |
|
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1081 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFB13N50APBFMOSFET N-CH 500V 14A TO220AB |
358 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 450mOhm @ 8.4A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±30V | 1910 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFS9N60APBFMOSFET N-CH 600V 9.2A D2PAK |
1,000 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIHA11N80E-GE3MOSFET N-CH 800V 12A TO220 |
446 | - |
|
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRF644SPBFMOSFET N-CH 250V 14A D2PAK |
176 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRFZ48RSPBFMOSFET N-CH 60V 50A TO263 |
992 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
SIHG25N40D-GE3MOSFET N-CH 400V 25A TO247AC |
127 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±30V | 1707 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIA110DJ-T1-GE3MOSFET N-CH 100V 5.4A/12A PPAK |
2,581 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.4A (Ta), 12A (Tc) | 7.5V, 10V | 55mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 550 pF @ 50 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIS108DN-T1-GE3MOSFET N-CH 80V 6.7A/16A PPAK |
2,965 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.7A (Ta), 16A (Tc) | 7.5V, 10V | 34mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 545 pF @ 40 V | - | 3.2W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIHP22N60AEL-GE3MOSFET N-CH 600V 21A TO220AB |
3,342 | - |
|
Datasheet |
Tube | EL | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 82 nC @ 10 V | ±30V | 1757 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHG180N60E-GE3MOSFET N-CH 600V 19A TO247AC |
339 | - |
|
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SIHA105N60EF-GE3MOSFET N-CH 600V 29A TO220 |
1,096 | - |
|
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 102mOhm @ 13A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1804 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IRFIBC40GPBFMOSFET N-CH 600V 3.5A TO220-3 |
133 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SISS28DN-T1-GE3MOSFET N-CH 25V 60A PPAK1212-8S |
3,283 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 1.52mOhm @ 15A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | +20V, -16V | 3640 pF @ 10 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIRA64DP-T1-GE3MOSFET N-CH 30V 60A PPAK SO-8 |
2,910 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.1mOhm @ 10A, 10V | 2.2V @ 250µA | 65 nC @ 10 V | +20V, -16V | 3420 pF @ 15 V | - | 27.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIA456DJ-T3-GE3MOSFET N-CH 200V 1.1A/2.6A PPAK |
3,788 | - |
|
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.1A (Ta), 2.6A (Tc) | 1.8V, 4.5V | 1.38Ohm @ 750mA, 4.5V | 1.4V @ 250µA | 14.5 nC @ 10 V | ±16V | 350 pF @ 100 V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |