Transistoren

制造商 Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated







































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BLM9D2022-08AMZ

BLM9D2022-08AMZ

BLM9D2022-08AM/LGA7X7/REELDP

Ampleon USA Inc.

3,646 -
Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - -
MRFG35002N6T1

MRFG35002N6T1

RF C BAND, GALLIUM ARSENIDE, N-C

Freescale Semiconductor

2,552 -
MRFG35002N6T1

Datenblatt

Bulk - Active pHEMT FET 3.55GHz 10dB 6 V - - 65 mA 1.5W 8 V
MWT-LN300

MWT-LN300

26 GHZ SUPER LOW NOISE PHEMT

Microwave Technology Inc.

950 -
MWT-LN300

Datenblatt

Case - Active pHEMT FET 26GHz 10dB 2.5 V - 0.6dB 25 mA - 4 V
MRFG35005NT1

MRFG35005NT1

RF S BAND, GALLIUM ARSENIDE, N-C

Freescale Semiconductor

3,825 -
MRFG35005NT1

Datenblatt

Bulk - Active pHEMT FET 1.8GHz ~ 3.6GHz 11dB 12 V 1.7A - 80 mA 450mW 15 V
MRFG35005NR5

MRFG35005NR5

FET RF 15V 3.55GHZ PLD-1.5

Freescale Semiconductor

898 -
Bulk - Active pHEMT FET 3.55GHz 11dB 12 V - - 80 mA 4.5W 15 V
MWT-LN600

MWT-LN600

26 GHZ SUPER LOW NOISE PHEMT

Microwave Technology Inc.

950 -
MWT-LN600

Datenblatt

Case - Active pHEMT FET 26GHz 12dB 3 V - 0.5dB @ 12GHz 100 mA 20dBm 5.5 V
MRF9045NBR1

MRF9045NBR1

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

845 -
MRF9045NBR1

Datenblatt

Bulk - Active LDMOS 1GHz 19dB 28 V 10µA - 350 mA 45W 65 V
MRF6S9045NBR1

MRF6S9045NBR1

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

3,466 -
MRF6S9045NBR1

Datenblatt

Bulk - Active LDMOS 1GHz 22.7dB 28 V 10µA - 350 mA 10W 68 V
MRFE6S9046NR1

MRFE6S9046NR1

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

457 -
MRFE6S9046NR1

Datenblatt

Bulk - Active LDMOS 960MHz 19dB 28 V - - 300 mA 35.5W 66 V
MRF9030GNR1

MRF9030GNR1

FET RF TO-270-2 GW

Freescale Semiconductor

234 -
Bulk - Active LDMOS - - - - - - - -
MRF6S27015GNR1

MRF6S27015GNR1

RF S BAND, N-CHANNEL , TO-270

Freescale Semiconductor

793 -
MRF6S27015GNR1

Datenblatt

Bulk - Active LDMOS 2.6GHz 14dB 28 V - - 160 mA 3W 68 V
MRF6S27015NR1

MRF6S27015NR1

RF S BAND, N-CHANNEL , TO-270AA

Freescale Semiconductor

325 -
MRF6S27015NR1

Datenblatt

Bulk - Active LDMOS 2GHz ~ 2.7GHz 14dB 28 V 10µA - 160 mA 3W 68 V
MRF19045LSR5

MRF19045LSR5

FET RF 65V 1.93GHZ NI-400S

Freescale Semiconductor

135 -
Bulk - Active LDMOS 1.93GHz 14.5dB 26 V - - 550 mA 9.5W 65 V
MRF18085BLSR3

MRF18085BLSR3

RF L BAND, N-CHANNEL

Freescale Semiconductor

146 -
MRF18085BLSR3

Datenblatt

Bulk - Active N-Channel 1.93GHz ~ 1.99GHz 12.5dB 26 V 10µA - 800 mA 85W 65 V
CGHV60040D-GP4

CGHV60040D-GP4

RF MOSFET HEMT 50V DIE

Wolfspeed, Inc.

150 -
CGHV60040D-GP4

Datenblatt

Tray GaN Active HEMT 6GHz 17dB 50 V - - 65 mA 40W 150 V
MRF9060MR1

MRF9060MR1

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

990 -
MRF9060MR1

Datenblatt

Bulk - Active N-Channel 1GHz 18dB 26 V 10µA - 450 mA 60W 65 V
MRF9060NR1

MRF9060NR1

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

247 -
MRF9060NR1

Datenblatt

Bulk - Active LDMOS 945MHz 18dB 26 V - - 450 mA 60W 65 V
MRFE6VP5150GNR1,528

MRFE6VP5150GNR1,528

WIDEBAND RF POWER LDMOS TRANSIST

NXP USA Inc.

475 -
MRFE6VP5150GNR1,528

Datenblatt

Bulk - Active LDMOS (Dual) 1.8MHz ~ 600MHz 26.1dB 50 V 5µA - 100 mA 150W 133 V
MRF1570FT1

MRF1570FT1

RF 2-ELEMENT, ULTRA HIGH FREQUE

Freescale Semiconductor

423 -
MRF1570FT1

Datenblatt

Bulk - Active N-Channel 470MHz 10dB 12.5 V 1µA - 800 mA 70W 40 V
MRFG35010NT1

MRFG35010NT1

RF S BAND, GALLIUM ARSENIDE, N-C

Freescale Semiconductor

3,855 -
MRFG35010NT1

Datenblatt

Bulk - Active pHEMT FET 3.55GHz 10dB 12 V - - 180 mA 9W 15 V
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