制造商 | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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ECH8619-TL-EN-CHANNEL AND P-CHANNEL SILICON |
3,829 | - |
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Bulk | - | Obsolete | N and P-Channel | Logic Level Gate | 60V | 3A, 2A | 93mOhm @ 1.5A, 10V | - | 12.8nC @ 10V | 560pF @ 20V | 1.5W | 150°C (TJ) | Surface Mount |