Transistoren von FETs, MOSFETs von Arrays

制造商 Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
ALD212904PAL

ALD212904PAL

MOSFET 2N-CH 10.6V 0.08A 8DIP

Advanced Linear Devices Inc.

3,029 -
ALD212904PAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD212904SAL

ALD212904SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

2,080 -
ALD212904SAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD212908PAL

ALD212908PAL

MOSFET 2N-CH 10.6V 0.08A 8DIP

Advanced Linear Devices Inc.

3,316 -
ALD212908PAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD212908SAL

ALD212908SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

2,338 -
ALD212908SAL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110908PAL

ALD110908PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.

3,745 -
ALD110908PAL

Datenblatt

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110914PAL

ALD110914PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.

3,708 -
ALD110914PAL

Datenblatt

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD1108ESCL

ALD1108ESCL

MOSFET 4N-CH 10V 16SOIC

Advanced Linear Devices Inc.

3,307 -
ALD1108ESCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10V - 500Ohm @ 5V 1.01V @ 1µA - 25pF @ 5V 600mW 0°C ~ 70°C (TJ) Surface Mount
ALD114804SCL

ALD114804SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

3,410 -
ALD114804SCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD210808PCL

ALD210808PCL

MOSFET 4N-CH 10.6V 0.08A 16DIP

Advanced Linear Devices Inc.

3,127 -
ALD210808PCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD210808SCL

ALD210808SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

3,408 -
ALD210808SCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110802PCL

ALD110802PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.

3,660 -
ALD110802PCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110802SCL

ALD110802SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

2,073 -
ALD110802SCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110804PCL

ALD110804PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.

3,386 -
ALD110804PCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110804SCL

ALD110804SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

2,710 -
ALD110804SCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110814PCL

ALD110814PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.

3,392 -
ALD110814PCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114813SCL

ALD114813SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

2,828 -
ALD114813SCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110808PCL

ALD110808PCL

MOSFET 4N-CH 10.6V 16DIP

Advanced Linear Devices Inc.

3,968 -
ALD110808PCL

Datenblatt

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114935PAL

ALD114935PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.

3,353 -
ALD114935PAL

Datenblatt

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD310700SCL

ALD310700SCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.

2,862 -
ALD310700SCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
ALD310702SCL

ALD310702SCL

MOSFET 4 P-CH 8V 16SOIC

Advanced Linear Devices Inc.

2,249 -
ALD310702SCL

Datenblatt

Tube EPAD®, Zero Threshold™ Active 4 P-Channel, Matched Pair Standard 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C Surface Mount
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