Transistoren-Bipolar (BJT bis Single, Pre-Biased)

制造商 Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType



































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
BCR158WE6327

BCR158WE6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

2,767 -
BCR158WE6327

Datenblatt

Bulk * Active - - - - - - - - - - -
BCR196TE6327

BCR196TE6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,158 -
BCR196TE6327

Datenblatt

Bulk * Active - - - - - - - - - - -
BCR183WE6327

BCR183WE6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,489 -
BCR183WE6327

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 30 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 250 mW Surface Mount
BCR142E6327

BCR142E6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,971 -
BCR142E6327

Datenblatt

Bulk Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 47 kOhms 70 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 150 MHz 200 mW Surface Mount
BCR141WH6327

BCR141WH6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,389 -
BCR141WH6327

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 22 kOhms 50 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 130 MHz 250 mW Surface Mount
BCR166E6327

BCR166E6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,031 -
BCR166E6327

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 47 kOhms 70 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 160 MHz 200 mW Surface Mount
BCR158W

BCR158W

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

2,988 -
BCR158W

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 47 kOhms 70 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 250 mW Surface Mount
BCR166WE6327

BCR166WE6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,847 -
BCR166WE6327

Datenblatt

Bulk * Active - - - - - - - - - - -
BCR562E6327

BCR562E6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

2,272 -
BCR562E6327

Datenblatt

Bulk * Active - - - - - - - - - - -
BCR148WH6327

BCR148WH6327

BIPOLAR DIGITAL TRANSISTOR

Infineon Technologies

3,818 -
BCR148WH6327

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 70 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 100 MHz 250 mW Surface Mount
FJV4114RMTF

FJV4114RMTF

0.1A, 50V, PNP

Fairchild Semiconductor

2,273 -
FJV4114RMTF

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 47 kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 200 mW Surface Mount
FJX3014RTF

FJX3014RTF

0.1A, 50V, NPN

Fairchild Semiconductor

3,913 -
FJX3014RTF

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 47 kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 250 MHz 200 mW Surface Mount
FJV4113RMTF

FJV4113RMTF

0.1A, 50V, PNP

Fairchild Semiconductor

2,744 -
FJV4113RMTF

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 47 kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 200 mW Surface Mount
PDTA114TE,115

PDTA114TE,115

0.1A, 50V, PNP

Philips

3,983 -
PDTA114TE,115

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 10 kOhms - 200 @ 1mA, 5V 150mV @ 500µA, 10mA 1µA - 150 mW Surface Mount
FJN3305RTA

FJN3305RTA

0.1A, 50V, NPN, TO-92

Fairchild Semiconductor

3,681 -
FJN3305RTA

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 10 kOhms 30 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 250 MHz 300 mW Through Hole
FJV3110RMTF

FJV3110RMTF

0.1A, 40V, NPN

Fairchild Semiconductor

2,456 -
FJV3110RMTF

Datenblatt

Bulk - Active NPN - Pre-Biased 100 mA 40 V 10 kOhms - 100 @ 1mA, 5V 300mV @ 1mA, 10mA 100nA (ICBO) 250 MHz 200 mW Surface Mount
FJN4301RTA

FJN4301RTA

0.1A, 50V, PNP, TO-92

Fairchild Semiconductor

3,238 -
FJN4301RTA

Datenblatt

Bulk - Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 4.7 kOhms 20 @ 10mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 300 mW Through Hole
PDTA114EE,115

PDTA114EE,115

0.1A, 50V, PNP

Philips

2,820 -
Bulk - Active PNP - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 30 @ 5mA, 5V 150mV @ 500µA, 10mA 100nA (ICBO) 180 MHz 150 mW Surface Mount
PDTC114EK,115

PDTC114EK,115

NPN RESISTOR-EQUIPPED TRANSISTOR

Philips

2,389 -
Bulk - Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 30 @ 5mA, 5V 150mV @ 500µA, 10mA 1µA - 250 mW Surface Mount
PDTC114EE,115

PDTC114EE,115

0.1A, 50V, NPN, SC-75

Philips

3,484 -
Bulk - Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 30 @ 5mA, 5V 150mV @ 500µA, 10mA 1µA 230 MHz 150 mW Surface Mount
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