Transistoren-Bipolar (BJT bis Single, Pre-Biased)

制造商 Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType



































































































































































































































































































































































































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Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
RN2103,LXHF(CT

RN2103,LXHF(CT

AUTO AEC-Q TR PNP Q1BSR=22KOHM

Toshiba Semiconductor and Storage

3,408 -
RN2103,LXHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 22 kOhms 22 kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200 MHz 100 mW Surface Mount
RN1108,LXHF(CT

RN1108,LXHF(CT

AUTO AEC-Q NPN Q1BSR=22K, Q1BER=

Toshiba Semiconductor and Storage

2,288 -
RN1108,LXHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250 MHz 100 mW Surface Mount
RN2110,LXHF(CT

RN2110,LXHF(CT

AUTO AEC-Q SINGLE PNP Q1BSR=4.7K

Toshiba Semiconductor and Storage

3,212 -
RN2110,LXHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200 MHz 100 mW Surface Mount
RN2106MFV,L3XHF(CT

RN2106MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER

Toshiba Semiconductor and Storage

3,199 -
RN2106MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
RN2103MFV,L3XHF(CT

RN2103MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=22K, Q1BER=

Toshiba Semiconductor and Storage

2,358 -
RN2103MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 22 kOhms 22 kOhms 70 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
RN2102MFV,L3XHF(CT

RN2102MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=10K, Q1BER=

Toshiba Semiconductor and Storage

2,193 -
RN2102MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 10 kOhms 10 kOhms 50 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
RN1106MFV,L3XHF(CT

RN1106MFV,L3XHF(CT

AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER

Toshiba Semiconductor and Storage

3,889 -
RN1106MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 4.7 kOhms 47 kOhms 80 @ 1mA, 5V 300mV @ 500µA, 5mA 500nA - 150 mW Surface Mount
RN1107MFV,L3XHF(CT

RN1107MFV,L3XHF(CT

AUTO AEC-Q NPN Q1BSR=10K, Q1BER=

Toshiba Semiconductor and Storage

2,869 -
RN1107MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA - 150 mW Surface Mount
RN2101MFV,L3XHF(CT

RN2101MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER

Toshiba Semiconductor and Storage

2,677 -
RN2101MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 4.7 kOhms 4.7 kOhms 30 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
RN1104MFV,L3XHF(CT

RN1104MFV,L3XHF(CT

AUTO AEC-Q NPN Q1BSR=47K, Q1BER=

Toshiba Semiconductor and Storage

2,776 -
RN1104MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA - 150 mW Surface Mount
RN1103MFV,L3XHF(CT

RN1103MFV,L3XHF(CT

AUTO AEC-Q NPN Q1BSR=22K, Q1BER=

Toshiba Semiconductor and Storage

3,852 -
RN1103MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 22 kOhms 22 kOhms 70 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA - 150 mW Surface Mount
RN2107MFV,L3XHF(CT

RN2107MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=10K, Q1BER=

Toshiba Semiconductor and Storage

2,933 -
RN2107MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 10 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA - 150 mW Surface Mount
RN2105MFV,L3XHF(CT

RN2105MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=2.2K, Q1BER

Toshiba Semiconductor and Storage

3,105 -
RN2105MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 2.2 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
RN2104MFV,L3XHF(CT

RN2104MFV,L3XHF(CT

AUTO AEC-Q PNP Q1BSR=47K, Q1BER=

Toshiba Semiconductor and Storage

2,730 -
RN2104MFV,L3XHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active PNP - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 80 @ 10mA, 5V 300mV @ 500µA, 5mA 500nA 250 MHz 150 mW Surface Mount
FJY4010R

FJY4010R

SMALL SIGNAL BIPOLAR TRANSISTOR

Fairchild Semiconductor

2,332 -
FJY4010R

Datenblatt

Bulk - Obsolete PNP - Pre-Biased 100 mA 40 V 10 kOhms - 100 @ 1mA, 5V 300mV @ 1mA, 10mA 100nA (ICBO) 200 MHz 200 mW Surface Mount
FJV4104RMTF

FJV4104RMTF

SMALL SIGNAL BIPOLAR TRANSISTOR

Fairchild Semiconductor

3,472 -
FJV4104RMTF

Datenblatt

Bulk - Obsolete PNP - Pre-Biased 100 mA 50 V 47 kOhms 47 kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 200 MHz 200 mW Surface Mount
FJNS3215RBU

FJNS3215RBU

SMALL SIGNAL BIPOLAR TRANSISTOR

Fairchild Semiconductor

2,365 -
Bulk - Obsolete NPN - Pre-Biased 100 mA 50 V 2.2 kOhms 10 kOhms 33 @ 10mA, 5V 300mV @ 500µA, 10mA 100nA (ICBO) 250 MHz 300 mW Through Hole
SMMUN2238LT1G

SMMUN2238LT1G

TRANS PREBIAS NPN 0.246W SOT-23

onsemi

3,409 -
SMMUN2238LT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active NPN - Pre-Biased 100 mA 50 V 2.2 kOhms - 160 @ 5mA, 10V 250mV @ 1mA, 10mA 500nA - 246 mW Surface Mount
SMUN5214T1G

SMUN5214T1G

TRANS PREBIAS NPN 50V SC70-3

onsemi

3,951 -
SMUN5214T1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk - Active NPN - Pre-Biased 100 mA 50 V 10 kOhms 47 kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 202 mW Surface Mount
RN1113,LXHF(CT

RN1113,LXHF(CT

AUTO AEC-Q NPN Q1BSR=47K, VCEO=5

Toshiba Semiconductor and Storage

3,526 -
RN1113,LXHF(CT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active NPN - Pre-Biased 100 mA 50 V 47 kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250 MHz 100 mW Surface Mount
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