Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BAV21

BAV21

RECTIFIER DIODE, 0.2A, 250V, DO-

Rochester Electronics, LLC

191,500 -
BAV21

Datenblatt

Bulk RoHS - - Active - - - - - - - -
STPSC2H12B2Y-TR

STPSC2H12B2Y-TR

AUTOMOTIVE 1200 V, 2 A HIGH SURG

STMicroelectronics

2,320 -
STPSC2H12B2Y-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Surface Mount 190pF @ 0V, 1MHz - 12 µA @ 1200 V 1200 V 5A -40°C ~ 175°C 1.5 V @ 2 A
PMEG3005EEFZ

PMEG3005EEFZ

PMEG3005EEF - 30 V, 0.5 A LOW VF

Rochester Electronics, LLC

168,150 -
PMEG3005EEFZ

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 17pF @ 1V, 1MHz 2 ns 15 µA @ 30 V 30 V 500mA 150°C (Max) 670 mV @ 500 mA
MUR820G

MUR820G

DIODE GEN PURP 200V 8A TO220AC

Rochester Electronics, LLC

3,340 -
MUR820G

Datenblatt

Bulk,Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 5 µA @ 200 V 200 V 8A -65°C ~ 175°C 975 mV @ 8 A
BAS40-04,215

BAS40-04,215

NEXPERIA BAS40-04 - RECTIFIER DI

Rochester Electronics, LLC

167,000 -
BAS40-04,215

Datenblatt

Bulk RoHS - - Active - - - - - - - -
STTH30R02DJF-TR

STTH30R02DJF-TR

DIODE GP 200V 30A POWERFLAT

STMicroelectronics

3,739 -
STTH30R02DJF-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 200 V 200 V 30A 175°C (Max) 1.15 V @ 30 A
BAS21/MI,235

BAS21/MI,235

BAS21 - HIGH-VOLTAGE SWITCHING D

Rochester Electronics, LLC

2,673 -
BAS21/MI,235

Datenblatt

Bulk RoHS - - Active - - - - - - - -
DMA10P1600UZ-TUB

DMA10P1600UZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS

2,619 -
DMA10P1600UZ-TUB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 1pF @ 400V, 1MHz - 5 µA @ 1600 V 1600 V 10A -55°C ~ 175°C 1.55 V @ 10 A
ES 1FV

ES 1FV

DIODE GEN PURP 1.5KV 500MA AXIAL

Sanken

3,598 -
ES 1FV

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 1500 V 1500 V 500mA -40°C ~ 150°C 2 V @ 500 mA
VS-12FR60

VS-12FR60

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

2,133 -
VS-12FR60

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 600 V 600 V 12A -65°C ~ 175°C 1.26 V @ 38 A
CD649

CD649

SIGNAL/COMPUTER DIODE

Microchip Technology

3,872 -
Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 20pF @ 4V, 1MHz - 50 nA @ 600 V 720 V 400mA -65°C ~ 175°C 1 V @ 100 mA
MBR8170TFSTWG

MBR8170TFSTWG

170V 8A SCHOTTKY

onsemi

2,962 -
MBR8170TFSTWG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 237pF @ 1V, 1MHz - 30 µA @ 170 V 170 V 8A (DC) -55°C ~ 175°C 890 mV @ 8 A
1N3611/TR

1N3611/TR

STD RECTIFIER

Microchip Technology

3,191 -
1N3611/TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
IDH05G65C5XKSA2

IDH05G65C5XKSA2

DIODE SCHOTTKY 650V 5A TO220-2

Infineon Technologies

3,069 -
IDH05G65C5XKSA2

Datenblatt

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 160pF @ 1V, 1MHz 0 ns 90 µA @ 650 V 650 V 5A (DC) -55°C ~ 175°C 1.7 V @ 5 A
SBR12E45LH1-13

SBR12E45LH1-13

DIODE SBR 45V 12A POWERDI5SP

Diodes Incorporated

3,773 -
SBR12E45LH1-13

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 300 µA @ 45 V 45 V 12A -65°C ~ 150°C 520 mV @ 12 A
FFSD1065A

FFSD1065A

650V 10A SIC SBD

onsemi

3,659 -
FFSD1065A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 575pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 18A (DC) -55°C ~ 175°C 1.75 V @ 10 A
1N457

1N457

SIGNAL/COMPUTER DIODE

Microchip Technology

2,977 -
Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 25 nA @ 60 V 60 V 150mA -65°C ~ 150°C 1 V @ 100 mA
MBR1090-M3/4W

MBR1090-M3/4W

DIODE SCHOTTKY 90V 10A TO220AC

Vishay General Semiconductor - Diodes Division

3,906 -
MBR1090-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -65°C ~ 150°C 800 mV @ 10 A
1N5615/TR

1N5615/TR

RECTIFIER UFR,FRR

Microchip Technology

2,601 -
1N5615/TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
LSM835G/TR13

LSM835G/TR13

DIODE SCHOTTKY 35V 8A DO215AB

Microchip Technology

3,286 -
LSM835G/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 2 mA @ 35 V 35 V 8A -55°C ~ 150°C 520 mV @ 8 A
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