Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BA157GHB0G

BA157GHB0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,479 -
BA157GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.2 V @ 1 A
BA158G B0G

BA158G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,736 -
BA158G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
BA158GHB0G

BA158GHB0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,242 -
BA158GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.2 V @ 1 A
BA159G B0G

BA159G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,004 -
BA159G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
SR009H

SR009H

DIODE SCHOTTKY 0.5A 90V DO-41

Taiwan Semiconductor Corporation

3,293 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 65pF @ 4V, 1MHz - 100 µA @ 90 V 90 V 500mA (DC) -55°C ~ 150°C 850 mV @ 500 mA
BA159GHB0G

BA159GHB0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,452 -
BA159GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.2 V @ 1 A
MBRF10150

MBRF10150

DIODE SCHOTTKY 150V 10A ITO220AB

Taiwan Semiconductor Corporation

3,381 -
Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A (DC) -55°C ~ 150°C 1.05 V @ 10 A
FR101G B0G

FR101G B0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

2,549 -
FR101G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.3 V @ 1 A
FR102G B0G

FR102G B0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation

2,601 -
FR102G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SF31G

SF31G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

3,359 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 950 mV @ 3 A
FR103G B0G

FR103G B0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,991 -
FR103G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFAF2008GH

SFAF2008GH

DIODE GEN PURP 600V 20A ITO220AC

Taiwan Semiconductor Corporation

2,877 -
Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
FR104G B0G

FR104G B0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3,413 -
FR104G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
MBRF2050H

MBRF2050H

DIODE SCHOTTKY 50V 20A ITO220

Taiwan Semiconductor Corporation

2,433 -
Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 50 V 50 V 20A (DC) -55°C ~ 150°C 820 mV @ 20 A
FR105G B0G

FR105G B0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,928 -
FR105G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFAF2007GH

SFAF2007GH

DIODE GEN PURP 500V 20A ITO220AC

Taiwan Semiconductor Corporation

2,342 -
Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
FR106G B0G

FR106G B0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

3,923 -
FR106G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
SFAF2008G

SFAF2008G

DIODE GEN PURP 600V 20A ITO220AC

Taiwan Semiconductor Corporation

2,592 -
Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 20A (DC) -55°C ~ 150°C 1.7 V @ 20 A
FR107G B0G

FR107G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,188 -
FR107G B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.3 V @ 1 A
GPA805H

GPA805H

DIODE GEN PURP 8A 600V TO220AC

Taiwan Semiconductor Corporation

2,164 -
Tube Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 8A (DC) -55°C ~ 150°C 1.1 V @ 8 A
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