Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HS5D R6

HS5D R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,680 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5401G B0G

1N5401G B0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3,606 -
1N5401G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
S10MC M6

S10MC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,993 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
1N5401GHB0G

1N5401GHB0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,147 -
1N5401GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS5M R6

HS5M R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,755 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 5A (DC) -55°C ~ 150°C 1.7 V @ 5 A
1N5402G B0G

1N5402G B0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,334 -
1N5402G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
MUR315S R6G

MUR315S R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2,407 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5402GHB0G

1N5402GHB0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

3,031 -
1N5402GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5D M6

HS5D M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,935 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5404G B0G

1N5404G B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

2,580 -
1N5404G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
SK52C R7

SK52C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3,096 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 5A -55°C ~ 150°C 550 mV @ 5 A
1N5404GHB0G

1N5404GHB0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3,739 -
1N5404GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
S5B R6G

S5B R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3,408 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
1N5406G B0G

1N5406G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

3,824 -
1N5406G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5F R6

HS5F R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,893 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5406GHB0G

1N5406GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2,996 -
1N5406GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
RS3M R7

RS3M R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,300 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5407G B0G

1N5407G B0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2,514 -
1N5407G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
ESH3D R6G

ESH3D R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

3,669 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 900 mV @ 3 A
1N5407GHB0G

1N5407GHB0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2,801 -
1N5407GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
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