Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
TSN525M60HS3G

TSN525M60HS3G

DIODE SCHOTTKY 60V 25A 8PDFN

Taiwan Semiconductor Corporation

1,011 -
Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 60 V 60 V 25A -55°C ~ 150°C 630 mV @ 25 A
SF2001PT C0G

SF2001PT C0G

DIODE GEN PURP 50V 20A TO247AD

Taiwan Semiconductor Corporation

3,262 -
SF2001PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2001PTHC0G

SF2001PTHC0G

DIODE GEN PURP 50V 20A TO247AD

Taiwan Semiconductor Corporation

3,956 -
SF2001PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2002G C0G

SF2002G C0G

DIODE GEN PURP 100V 20A TO220AB

Taiwan Semiconductor Corporation

3,804 -
SF2002G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 10 A
SF2002GHC0G

SF2002GHC0G

DIODE GEN PURP 100V 20A TO220AB

Taiwan Semiconductor Corporation

2,669 -
SF2002GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 20A -55°C ~ 150°C 975 mV @ 10 A
SF2002PT C0G

SF2002PT C0G

DIODE GEN PURP 100V 20A TO247AD

Taiwan Semiconductor Corporation

2,479 -
SF2002PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2002PTHC0G

SF2002PTHC0G

DIODE GEN PURP 100V 20A TO247AD

Taiwan Semiconductor Corporation

3,079 -
SF2002PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2003G C0G

SF2003G C0G

DIODE GEN PURP 150V 20A TO220AB

Taiwan Semiconductor Corporation

2,196 -
SF2003G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 20A -55°C ~ 150°C 975 mV @ 10 A
SF2003GHC0G

SF2003GHC0G

DIODE GEN PURP 150V 20A TO220AB

Taiwan Semiconductor Corporation

2,016 -
SF2003GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 20A -55°C ~ 150°C 975 mV @ 10 A
SF2003PT C0G

SF2003PT C0G

DIODE GEN PURP 150V 20A TO247AD

Taiwan Semiconductor Corporation

2,543 -
SF2003PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2003PTHC0G

SF2003PTHC0G

DIODE GEN PURP 150V 20A TO247AD

Taiwan Semiconductor Corporation

2,177 -
SF2003PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 20A -55°C ~ 150°C 1.1 V @ 20 A
SF2004GHC0G

SF2004GHC0G

DIODE GEN PURP 200V 20A TO220AB

Taiwan Semiconductor Corporation

2,478 -
SF2004GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 20A -55°C ~ 150°C 975 mV @ 10 A
SF2005GHC0G

SF2005GHC0G

DIODE GEN PURP 300V 20A TO220AB

Taiwan Semiconductor Corporation

3,489 -
SF2005GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 20A -55°C ~ 150°C 1.3 V @ 10 A
SF2006GHC0G

SF2006GHC0G

DIODE GEN PURP 400V 20A TO220AB

Taiwan Semiconductor Corporation

3,981 -
SF2006GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 20A -55°C ~ 150°C 1.3 V @ 10 A
SF2007G C0G

SF2007G C0G

DIODE GEN PURP 500V 20A TO220AB

Taiwan Semiconductor Corporation

2,248 -
SF2007G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SF2007GHC0G

SF2007GHC0G

DIODE GEN PURP 500V 20A TO220AB

Taiwan Semiconductor Corporation

2,883 -
SF2007GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SF2007PT C0G

SF2007PT C0G

DIODE GEN PURP 500V 20A TO247AD

Taiwan Semiconductor Corporation

2,538 -
SF2007PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.9 V @ 20 A
SF2007PTHC0G

SF2007PTHC0G

DIODE GEN PURP 500V 20A TO247AD

Taiwan Semiconductor Corporation

2,277 -
SF2007PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 175pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 20A -55°C ~ 150°C 1.9 V @ 20 A
SF2008G C0G

SF2008G C0G

DIODE GEN PURP 600V 20A TO220AB

Taiwan Semiconductor Corporation

2,430 -
SF2008G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 20A -55°C ~ 150°C 1.7 V @ 10 A
SF2008GHC0G

SF2008GHC0G

DIODE GEN PURP 600V 20A TO220AB

Taiwan Semiconductor Corporation

3,678 -
SF2008GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 20A -55°C ~ 150°C 1.7 V @ 10 A
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