Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SR1090HC0G

SR1090HC0G

DIODE SCHOTTKY 90V 10A TO220AB

Taiwan Semiconductor Corporation

2,952 -
SR1090HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 90 V 90 V 10A -55°C ~ 150°C 850 mV @ 5 A
FR157GHR0G

FR157GHR0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

3,351 -
FR157GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1.3 V @ 1.5 A
ES2JHM4G

ES2JHM4G

DIODE GEN PURP 600V 2A DO214AA

Taiwan Semiconductor Corporation

2,071 -
ES2JHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
UG12JHC0G

UG12JHC0G

DIODE GEN PURP 600V 12A TO220AC

Taiwan Semiconductor Corporation

3,650 -
UG12JHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 5 µA @ 600 V 600 V 12A -55°C ~ 150°C 2 V @ 12 A
SR115HR0G

SR115HR0G

DIODE SCHOTTKY 150V 1A DO204AL

Taiwan Semiconductor Corporation

2,389 -
SR115HR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
1N5408G

1N5408G

DIODE GEN PURP 3A 1000V DO-201AD

Taiwan Semiconductor Corporation

2,640 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 3A (DC) -55°C ~ 150°C 1 V @ 3 A
S2D M4G

S2D M4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

2,404 -
S2D M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 1.15 V @ 2 A
SRA10100 C0G

SRA10100 C0G

DIODE SCHOTTKY 100V 10A TO220AC

Taiwan Semiconductor Corporation

3,686 -
SRA10100 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
UG5J C0G

UG5J C0G

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

3,808 -
UG5J C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 3 V @ 5 A
SRA10100HC0G

SRA10100HC0G

DIODE SCHOTTKY 100V 10A TO220AC

Taiwan Semiconductor Corporation

3,766 -
SRA10100HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
UG5JHC0G

UG5JHC0G

DIODE GEN PURP 600V 5A TO220AC

Taiwan Semiconductor Corporation

3,110 -
UG5JHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 3 V @ 5 A
SRA10150 C0G

SRA10150 C0G

DIODE SCHOTTKY 150V 10A TO220AC

Taiwan Semiconductor Corporation

2,158 -
SRA10150 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 950 mV @ 10 A
UG8JHC0G

UG8JHC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

2,089 -
UG8JHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 25 ns 30 µA @ 600 V 600 V 8A -55°C ~ 150°C 2.9 V @ 8 A
SRA10150HC0G

SRA10150HC0G

DIODE SCHOTTKY 150V 10A TO220AC

Taiwan Semiconductor Corporation

3,642 -
SRA10150HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 950 mV @ 10 A
1N5820HR0G

1N5820HR0G

DIODE SCHOTTKY 20V 3A DO201AD

Taiwan Semiconductor Corporation

2,710 -
1N5820HR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 475 mV @ 3 A
S2G M4G

S2G M4G

DIODE GEN PURP 400V 2A DO214AA

Taiwan Semiconductor Corporation

3,280 -
S2G M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.15 V @ 2 A
1N5821HR0G

1N5821HR0G

DIODE SCHOTTKY 30V 3A DO201AD

Taiwan Semiconductor Corporation

3,394 -
1N5821HR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 3A -55°C ~ 125°C 500 mV @ 3 A
S2J M4G

S2J M4G

DIODE GEN PURP 600V 2A DO214AA

Taiwan Semiconductor Corporation

3,626 -
S2J M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 1 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.15 V @ 2 A
UGA15120 C0G

UGA15120 C0G

DIODE GEN PURP 15A TO220AC

Taiwan Semiconductor Corporation

2,762 -
UGA15120 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 65 ns 5 µA @ 1200 V - 15A -55°C ~ 175°C 2.9 V @ 15 A
1N5822HR0G

1N5822HR0G

DIODE SCHOTTKY 40V 3A DO201AD

Taiwan Semiconductor Corporation

2,747 -
1N5822HR0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 525 mV @ 3 A
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