Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S3KB M4G

S3KB M4G

DIODE GEN PURP 800V 3A DO214AA

Taiwan Semiconductor Corporation

3,308 -
S3KB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.15 V @ 3 A
S3MB M4G

S3MB M4G

DIODE GEN PURP 3A DO214AA

Taiwan Semiconductor Corporation

2,068 -
S3MB M4G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V - 3A -55°C ~ 150°C 1.15 V @ 3 A
SF2L6G R0G

SF2L6G R0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

2,534 -
SF2L6G R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
ES2DHM4G

ES2DHM4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

2,543 -
ES2DHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
S2BA M2G

S2BA M2G

DIODE GEN PURP 100V 1.5A DO214AC

Taiwan Semiconductor Corporation

3,710 -
S2BA M2G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 1.5 µs 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
ES2DVHM4G

ES2DVHM4G

DIODE GEN PURP 200V 2A DO214AA

Taiwan Semiconductor Corporation

3,152 -
ES2DVHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 4V, 1MHz 20 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
ES2FHM4G

ES2FHM4G

DIODE GEN PURP 300V 2A DO214AA

Taiwan Semiconductor Corporation

3,496 -
ES2FHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 2A -55°C ~ 150°C 1.3 V @ 2 A
SRA850 C0G

SRA850 C0G

DIODE SCHOTTKY 50V 8A TO220AC

Taiwan Semiconductor Corporation

2,893 -
SRA850 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
SRT19HA1G

SRT19HA1G

DIODE SCHOTTKY 90V 1A TS-1

Taiwan Semiconductor Corporation

2,821 -
SRT19HA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 150°C 800 mV @ 1 A
SRA850HC0G

SRA850HC0G

DIODE SCHOTTKY 50V 8A TO220AC

Taiwan Semiconductor Corporation

2,442 -
SRA850HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
UG06A A1G

UG06A A1G

DIODE GEN PURP 50V 600MA TS-1

Taiwan Semiconductor Corporation

2,920 -
UG06A A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 50 V 50 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRA860 C0G

SRA860 C0G

DIODE SCHOTTKY 60V 8A TO220AC

Taiwan Semiconductor Corporation

3,005 -
SRA860 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
UG06AHA1G

UG06AHA1G

DIODE GEN PURP 50V 600MA TS-1

Taiwan Semiconductor Corporation

4,000 -
UG06AHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 50 V 50 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRA860HC0G

SRA860HC0G

DIODE SCHOTTKY 60V 8A TO220AC

Taiwan Semiconductor Corporation

2,097 -
SRA860HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 8A -55°C ~ 150°C 700 mV @ 8 A
UG06B A1G

UG06B A1G

DIODE GEN PURP 100V 600MA TS-1

Taiwan Semiconductor Corporation

2,296 -
UG06B A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRA890 C0G

SRA890 C0G

DIODE SCHOTTKY 90V 8A TO220AC

Taiwan Semiconductor Corporation

3,024 -
SRA890 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A -55°C ~ 150°C 850 mV @ 8 A
UG06BHA1G

UG06BHA1G

DIODE GEN PURP 100V 600MA TS-1

Taiwan Semiconductor Corporation

3,502 -
UG06BHA1G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
SRA890HC0G

SRA890HC0G

DIODE SCHOTTKY 90V 8A TO220AC

Taiwan Semiconductor Corporation

3,298 -
SRA890HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 8A -55°C ~ 150°C 850 mV @ 8 A
UG06C A1G

UG06C A1G

DIODE GEN PURP 150V 600MA TS-1

Taiwan Semiconductor Corporation

2,896 -
UG06C A1G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
ES2GHM4G

ES2GHM4G

DIODE GEN PURP 400V 2A DO214AA

Taiwan Semiconductor Corporation

2,792 -
ES2GHM4G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
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