Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SS110LHR3G

SS110LHR3G

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation

3,460 -
SS110LHR3G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
1N4006G A0G

1N4006G A0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,109 -
1N4006G A0G

Datasheet

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
HERAF1001G C0G

HERAF1001G C0G

DIODE GEN PURP 50V 10A ITO220AC

Taiwan Semiconductor Corporation

3,941 -
HERAF1001G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 10A -55°C ~ 150°C 1 V @ 10 A
MBR745HC0G

MBR745HC0G

DIODE SCHOTTKY 50V 7.5A TO220AC

Taiwan Semiconductor Corporation

2,247 -
MBR745HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 50 V 50 V 7.5A -55°C ~ 150°C 840 mV @ 15 A
SS110LHRFG

SS110LHRFG

DIODE SCHOTTKY 100V 1A SUB SMA

Taiwan Semiconductor Corporation

3,413 -
SS110LHRFG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 100 V 100 V 1A -55°C ~ 150°C 800 mV @ 1 A
1N4006GHA0G

1N4006GHA0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,323 -
1N4006GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1 V @ 1 A
HERAF1002G C0G

HERAF1002G C0G

DIODE GEN PURP 100V 10A ITO220AC

Taiwan Semiconductor Corporation

3,407 -
HERAF1002G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 1 V @ 10 A
MBR750 C0G

MBR750 C0G

DIODE SCHOTTKY 50V 7.5A TO220AC

Taiwan Semiconductor Corporation

3,317 -
MBR750 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 50 V 50 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
SS115HR3G

SS115HR3G

DIODE SCHOTTKY 150V 1A DO214AC

Taiwan Semiconductor Corporation

2,364 -
SS115HR3G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 150 V 150 V 1A -55°C ~ 125°C 500 mV @ 1 A
1N4007GHA0G

1N4007GHA0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,870 -
1N4007GHA0G

Datasheet

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1 V @ 1 A
HERAF1003G C0G

HERAF1003G C0G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

3,618 -
HERAF1003G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 1 V @ 10 A
MBR750HC0G

MBR750HC0G

DIODE SCHOTTKY 60V 7.5A TO220AC

Taiwan Semiconductor Corporation

3,054 -
MBR750HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
SS115L R3G

SS115L R3G

DIODE SCHOTTKY 150V 1A SUB SMA

Taiwan Semiconductor Corporation

2,417 -
SS115L R3G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 150 V 150 V 1A -55°C ~ 150°C 900 mV @ 1 A
1N4448 A0G

1N4448 A0G

DIODE GEN PURP 100V 150MA DO35

Taiwan Semiconductor Corporation

2,924 -
1N4448 A0G

Datasheet

Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 150mA -65°C ~ 150°C 720 mV @ 5 mA
HERAF1004G C0G

HERAF1004G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

2,280 -
HERAF1004G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1 V @ 10 A
MBR760 C0G

MBR760 C0G

DIODE SCHOTTKY 60V 7.5A TO220AC

Taiwan Semiconductor Corporation

3,166 -
MBR760 C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
SS115L RFG

SS115L RFG

DIODE SCHOTTKY 150V 1A SUB SMA

Taiwan Semiconductor Corporation

2,989 -
SS115L RFG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 150 V 150 V 1A -55°C ~ 150°C 900 mV @ 1 A
1N4933G A0G

1N4933G A0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation

3,446 -
1N4933G A0G

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.2 V @ 1 A
HERAF1005G C0G

HERAF1005G C0G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation

2,085 -
HERAF1005G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.3 V @ 10 A
MBR760HC0G

MBR760HC0G

DIODE SCHOTTKY 60V 7.5A TO220AC

Taiwan Semiconductor Corporation

3,501 -
MBR760HC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 7.5A -55°C ~ 150°C 750 mV @ 7.5 A
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