Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MBR15200DJFTRDIODE SCHOTTKY 200V PDFNWB5X6-8L |
2,735 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 1 mA @ 200 V | 200 V | - | -55°C ~ 200°C | 920 mV @ 15 A | ||
S3D10065IDIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A | ||
S3D10065D1DIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 621pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.7 V @ 10 A | ||
S4D08120ADIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 560pF @ 0V, 1MHz | 0 ns | 15 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 1.8 V @ 8 A | |||
STD20150TRDIODE SCHOTTKY 150V DPAK |
1,683 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 150 V | 150 V | - | -55°C ~ 150°C | 1.55 V @ 20 A | ||
ST2045AXTRDIODE SCHOTTKY 45V R-6 |
3,296 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1.2 mA @ 45 V | 45 V | - | -55°C ~ 150°C | 580 mV @ 20 A | ||
S4D10120ADIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 772pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | |||
S3D20065HDIODE SCHOTTKY SILICON CARBIDE S |
600 | - |
|
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 10 A | ||
S3D20065ADIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 10 A | ||
S4D10120HDIODE SCHOTTKY SILICON CARBIDE S |
598 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 772pF @ 0V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | |||
S4D15120ADIODE SCHOTTKY SILICON CARBIDE S |
290 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 35 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | |||
S4D15120HDIODE SCHOTTKY SILICON CARBIDE S |
300 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1200pF @ 0V, 1MHz | 0 ns | 35 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.8 V @ 15 A | |||
SB2150TADIODE SCHOTTKY 150V DO15 |
1,976 | - |
|
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 140pF @ 5V, 1MHz | - | 1 mA @ 150 V | 150 V | - | -55°C ~ 150°C | 880 mV @ 2 A | ||
MBR560STRDIODE SCHOTTKY 60V TO277B |
1,927 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | - | -55°C ~ 150°C | 670 mV @ 5 A | ||
SK515BTRDIODE SCHOTTKY 150V SMB |
1,211 | - |
|
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 1 mA @ 150 V | 150 V | - | -55°C ~ 150°C | 930 mV @ 5 A | ||
SB2100TADIODE SCHOTTKY 100V DO15 |
1,489 | - |
|
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 140pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | - | -55°C ~ 150°C | 850 mV @ 2 A | ||
S3D06065ADIODE SCHOTTKY SILICON CARBIDE S |
1,000 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 382pF @ 0V, 1MHz | 0 ns | 8 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.7 V @ 6 A | |||
S3D06065IDIODE SCHOTTKY SILICON CARBIDE S |
996 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 382pF @ 0V, 1MHz | 0 ns | 8 µA @ 650 V | 650 V | 6A | -55°C ~ 175°C | 1.7 V @ 6 A | |||
S4D04120ADIODE SCHOTTKY SILICON CARBIDE S |
250 | - |
|
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 4A | -55°C ~ 175°C | 1.8 V @ 4 A | |||
S4D05120ADIODE SCHOTTKY SILICON CARBIDE S |
298 | - |
|
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 302pF @ 0V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 5 A |