Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
CRS03(TE85L,Q,M)

CRS03(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A SFLAT

Toshiba Semiconductor and Storage

2,708 -
CRS03(TE85L,Q,M)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 40pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 1A -40°C ~ 150°C 450 mV @ 1 A
CUS10S40,H3F

CUS10S40,H3F

DIODE SCHOTTKY 40V 1A USC

Toshiba Semiconductor and Storage

2,786 -
CUS10S40,H3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 120pF @ 0V, 1MHz - 150 µA @ 40 V 40 V 1A 125°C (Max) 400 mV @ 500 mA
CUHS20F40,H3F

CUHS20F40,H3F

SCHOTTKY BARRIER DIODE, 40V/2A,

Toshiba Semiconductor and Storage

2,813 -
CUHS20F40,H3F

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 300pF @ 0V, 1MHz - 60 µA @ 40 V 40 V 2A 150°C (Max) 540 mV @ 2 A
CMS03(TE12L,Q,M)

CMS03(TE12L,Q,M)

DIODE SCHOTTKY 30V 3A MFLAT

Toshiba Semiconductor and Storage

1,740 -
CMS03(TE12L,Q,M)

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 3A -40°C ~ 150°C 450 mV @ 3 A
CMS15I40A(TE12L,QM

CMS15I40A(TE12L,QM

DIODE SCHOTTKY 40V 1.5A M-FLAT

Toshiba Semiconductor and Storage

2,765 -
CMS15I40A(TE12L,QM

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 62pF @ 10V, 1MHz - 100 µA @ 40 V 40 V 1.5A 150°C (Max) 490 mV @ 1.5 A
CMS30I30A(TE12L,QM

CMS30I30A(TE12L,QM

DIODE SCHOTTKY 30V 3A M-FLAT

Toshiba Semiconductor and Storage

2,293 -
CMS30I30A(TE12L,QM

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 3A 150°C (Max) 490 mV @ 3 A
CMS10I30A(TE12L,QM

CMS10I30A(TE12L,QM

DIODE SCHOTTKY 30V 1A M-FLAT

Toshiba Semiconductor and Storage

2,820 -
CMS10I30A(TE12L,QM

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 82pF @ 10V, 1MHz - 100 µA @ 30 V 30 V 1A 150°C (Max) 360 mV @ 1 A
CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

DIODE SCHOTTKY 40V 3A MFLAT

Toshiba Semiconductor and Storage

2,568 -
CMS16(TE12L,Q,M)

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 40 V 40 V 3A -40°C ~ 150°C 550 mV @ 3 A
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