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Dioden-Gleichrichter-Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EM1YDIODE GEN PURP 100V 1A AXIAL |
2,488 | - |
|
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 100 V | 100 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
|
UF27520070A1.T1PIV 200V IO 90A TRR 70NS CHIP SI |
3,280 | - |
|
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 70 ns | 60 µA @ 200 V | 200 V | 90A | 150°C (Max) | 1 V @ 90 A | |
|
|
EM01ZDIODE GEN PURP 200V 1A AXIAL |
2,937 | - |
|
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 970 mV @ 1 A | |
|
VS-100BGQ015HF4DIODE SCHOTTKY 15V 100A POWERTAB |
2,844 | - |
|
Datenblatt |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 3800pF @ 5V, 1MHz | - | 18 mA @ 15 V | 15 V | 100A | -55°C ~ 125°C | 520 mV @ 100 A |
|
|
EP01CDIODE GEN PURP 1KV 200MA AXIAL |
3,411 | - |
|
Datenblatt |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 200 ns | 5 µA @ 1000 V | 1000 V | 200mA | -40°C ~ 150°C | 4 V @ 200 mA | |
|
|
VS-100BGQ045HF4DIODE SCHOTTKY 45V 100A POWERTAB |
2,520 | - |
|
Datenblatt |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 2700pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 100A | -55°C ~ 150°C | 770 mV @ 100 A |
|
|
ES1DIODE GEN PURP 400V 700MA AXIAL |
2,370 | - |
|
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 400 V | 400 V | 700mA | -40°C ~ 150°C | 2.5 V @ 800 mA | |
|
CDLL486BDIODE GEN PURP 250V 200MA DO213 |
2,287 | - |
|
Datenblatt |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | - | 100 µA @ 250 V | 250 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
|
EU1ZDIODE GEN PURP 200V 500MA AXIAL |
2,326 | - |
|
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 200 V | 200 V | 500mA | -40°C ~ 150°C | 1 V @ 500 mA | |
|
|
DMA30P1600HRPOWER DIODE DISC-RECTIFIER ISOPL |
2,771 | - |
|
Datenblatt |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 400V, 1MHz | - | 40 µA @ 1600 V | 1600 V | 30A | -55°C ~ 175°C | 1.28 V @ 30 A | |
|
|
EU2DIODE GEN PURP 400V 1A AXIAL |
2,874 | - |
|
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 400 V | 400 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
VS-EBU8006HF4DIODE GEN PURP 600V 80A POWERTAB |
2,057 | - |
|
Datenblatt |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 8 µA @ 600 V | 600 V | 80A | -65°C ~ 175°C | 1.53 V @ 80 A | |
|
|
EU2ADIODE GEN PURP 600V 1A AXIAL |
3,662 | - |
|
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 1.4 V @ 1 A | |
|
|
PCFFS08120AFDIODE SCHOTTKY 8A 1200V DIE |
2,141 | - |
|
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | 200 µA @ 1200 V | 1200 V | 8A | 175°C (Max) | 1.723 V @ 20 A | ||
|
|
RH 1AV1DIODE GEN PURP 600V 600MA AXIAL |
3,720 | - |
|
Datenblatt |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |
|
JANTX1N5617DIODE GEN PURP 400V 1A AXIAL |
2,177 | - |
|
Datenblatt |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 35pF @ 12V, 1MHz | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
RH 1BV1DIODE GEN PURP 800V 600MA AXIAL |
3,722 | - |
|
Datenblatt |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 800 V | 800 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |
|
|
RH 1ZV1DIODE GEN PURP 200V 600MA AXIAL |
2,083 | - |
|
Datenblatt |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 200 V | 200 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |
|
|
RM 2ZV1DIODE GEN PURP 200V 1.2A AXIAL |
3,246 | - |
|
Datenblatt |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 200 V | 200 V | 1.2A | -40°C ~ 150°C | 910 mV @ 1.5 A | |
|
|
CD5822DIODE SMALL-SIGNAL SCHOTTKY |
3,982 | - |
|
Datenblatt |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 550 mV @ 3 A |
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