Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
KCH30A20

KCH30A20

DIODE SCHOTTKY 200V 30A TO-247

KYOCERA AVX

2,325 -
KCH30A20

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 300 µA @ 200 V 200 V 30A -40°C ~ 150°C 920 mV @ 15 A
31GF6-E3/73

31GF6-E3/73

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division

3,805 -
31GF6-E3/73

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 20 µA @ 600 V 600 V 3A -40°C ~ 150°C 1.6 V @ 3 A
1N5552C.TR

1N5552C.TR

DIODE GEN PURP 600V 5A AXIAL

Semtech Corporation

2,052 -
1N5552C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 600 V 600 V 5A - 1 V @ 3 A
MUR460HR0G

MUR460HR0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

2,844 -
MUR460HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
1N5553C.TR

1N5553C.TR

DIODE GEN PURP 800V 3A AXIAL

Semtech Corporation

2,063 -
1N5553C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 800 V 800 V 5A - 1 V @ 3 A
MUR4L20HR0G

MUR4L20HR0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3,783 -
MUR4L20HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
1N5551C.TR

1N5551C.TR

DIODE GEN PURP 400V 3A AXIAL

Semtech Corporation

2,726 -
1N5551C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 400 V 400 V 5A - 1 V @ 3 A
MUR4L40HR0G

MUR4L40HR0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

2,280 -
MUR4L40HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
1N5550C.TR

1N5550C.TR

DIODE GEN PURP 200V 5A AXIAL

Semtech Corporation

3,221 -
1N5550C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 200 V 200 V 5A - 1 V @ 3 A
MUR4L60HR0G

MUR4L60HR0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

3,266 -
MUR4L60HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
DNA30E2200PZ-TUB

DNA30E2200PZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS

2,667 -
DNA30E2200PZ-TUB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.26 V @ 30 A
SDT8A120P5-7

SDT8A120P5-7

DIODE SCHOTTKY 120V 8A POWERDI 5

Diodes Incorporated

3,538 -
SDT8A120P5-7

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 120 V 120 V 8A - 840 mV @ 8 A
BYC100W-1200PQ

BYC100W-1200PQ

BYC100W-1200P/TO247-2L/STANDARD

WeEn Semiconductors

3,688 -
BYC100W-1200PQ

Datenblatt

Tube EEPP™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 90 ns 250 µA @ 1200 V 1200 V 100A 175°C (Max) 3.3 V @ 100 A
SDT8A120P5-7D

SDT8A120P5-7D

SCHOTTKY RECTIFIER PDI5

Diodes Incorporated

3,825 -
SDT8A120P5-7D

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
GC05MPS12-220

GC05MPS12-220

SIC DIODE 1200V 5A TO-220-2

GeneSiC Semiconductor

2,061 -
GC05MPS12-220

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 359pF @ 1V, 1MHz 0 ns 4 µA @ 1200 V 1200 V 29A (DC) -55°C ~ 175°C 1.8 V @ 5 A
S5KB R5G

S5KB R5G

DIODE GEN PURP 800V 5A DO214AA

Taiwan Semiconductor Corporation

2,833 -
S5KB R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 5A -55°C ~ 150°C 1.1 V @ 5 A
JANTX1N4246/TR

JANTX1N4246/TR

RECTIFIER UFR,FRR

Microchip Technology

2,832 -
Tape & Reel (TR) Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 3 A
SS3H9HE3_B/I

SS3H9HE3_B/I

DIODE SCHOTTKY 90V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3,974 -
SS3H9HE3_B/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q100 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 20 µA @ 90 V 90 V 3A -65°C ~ 175°C 800 mV @ 3 A
DMA30P1600HB

DMA30P1600HB

POWER DIODE DISCRETES-RECTIFIER

IXYS

3,376 -
DMA30P1600HB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 11pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 30A -55°C ~ 175°C 1.26 V @ 30 A
S12MCHR7G

S12MCHR7G

DIODE GEN PURP 1KV 12A DO214AB

Taiwan Semiconductor Corporation

2,958 -
S12MCHR7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 12A -55°C ~ 150°C 1.1 V @ 12 A
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