Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SDT5100LP5-7

SDT5100LP5-7

DIODE SCHOTTKY 100V 5A POWERDI 5

Diodes Incorporated

3,976 -
SDT5100LP5-7

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 4 µA @ 100 V 100 V 5A -55°C ~ 150°C 820 mV @ 5 A
VS-18TQ045S-M3

VS-18TQ045S-M3

DIODE SCHOTTKY 45V 18A D2PAK

Vishay General Semiconductor - Diodes Division

2,022 -
VS-18TQ045S-M3

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.5 mA @ 35 V 45 V 18A -55°C ~ 175°C 600 mV @ 18 A
SDT5100LP5-7D

SDT5100LP5-7D

DIODE SCHOTTKY 100V 5A POWERDI 5

Diodes Incorporated

2,181 -
SDT5100LP5-7D

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 4 µA @ 100 V 100 V 5A -55°C ~ 150°C 820 mV @ 5 A
BYV29B-300HE3_A/I

BYV29B-300HE3_A/I

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,839 -
BYV29B-300HE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 300 V 300 V 8A -40°C ~ 150°C 1.25 V @ 8 A
XBS306P11R-G

XBS306P11R-G

SCHOTTKY BARRIER DIODE

Torex Semiconductor Ltd

3,652 -
XBS306P11R-G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 3A 150°C 750 mV @ 3 A
BYV29B-400HE3_A/I

BYV29B-400HE3_A/I

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,742 -
BYV29B-400HE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.25 V @ 8 A
CMG02(TE12L,Q,M)

CMG02(TE12L,Q,M)

DIODE GEN PURP 400V 2A M-FLAT

Toshiba Semiconductor and Storage

3,754 -
CMG02(TE12L,Q,M)

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - - 10 µA @ 400 V 400 V 2A -40°C ~ 150°C 1.1 V @ 2 A
FESB8ATHE3_A/I

FESB8ATHE3_A/I

DIODE GEN PURP 50V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,543 -
FESB8ATHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 950 mV @ 8 A
SB840TA

SB840TA

DIODE SCHOTTKY 40V 8A DO201AD

SMC Diode Solutions

2,455 -
SB840TA

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 200pF @ 5V, 1MHz - 1 mA @ 40 V 40 V 8A -55°C ~ 150°C 650 mV @ 8 A
FESB8BTHE3_A/I

FESB8BTHE3_A/I

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,644 -
FESB8BTHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 950 mV @ 8 A
VSSB3L6S-M3/5BT

VSSB3L6S-M3/5BT

DIODE SCHOTTKY 60V 2.6A DO214AA

Vishay General Semiconductor - Diodes Division

2,858 -
VSSB3L6S-M3/5BT

Datenblatt

Tape & Reel (TR) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 358pF @ 4V, 1MHz - 1.2 mA @ 60 V 60 V 2.6A -55°C ~ 150°C 590 mV @ 3 A
FESB8CTHE3_A/I

FESB8CTHE3_A/I

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,355 -
FESB8CTHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 950 mV @ 8 A
VSSB3L6S-M3/52T

VSSB3L6S-M3/52T

DIODE SCHOTTKY 60V 2.6A DO214AA

Vishay General Semiconductor - Diodes Division

2,200 -
VSSB3L6S-M3/52T

Datenblatt

Tape & Reel (TR) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 358pF @ 4V, 1MHz - 1.2 mA @ 60 V 60 V 2.6A -55°C ~ 150°C 590 mV @ 3 A
FESB8DTHE3_A/I

FESB8DTHE3_A/I

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,937 -
FESB8DTHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 950 mV @ 8 A
SS310H

SS310H

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,085 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A (DC) -55°C ~ 150°C 850 mV @ 3 A
UGB8FTHE3_A/I

UGB8FTHE3_A/I

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,613 -
UGB8FTHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 300 V 300 V 8A -40°C ~ 150°C 1.25 V @ 8 A
ES1GLWHRVG

ES1GLWHRVG

DIODE GEN PURP 400V 1A SOD123W

Taiwan Semiconductor Corporation

3,808 -
ES1GLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.3 V @ 1 A
UGB8GTHE3_A/I

UGB8GTHE3_A/I

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,204 -
UGB8GTHE3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.25 V @ 8 A
ES1JLWHRVG

ES1JLWHRVG

DIODE GEN PURP 600V 1A SOD123W

Taiwan Semiconductor Corporation

3,597 -
ES1JLWHRVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.7 V @ 1 A
BYV29B-300HE3_A/P

BYV29B-300HE3_A/P

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,372 -
BYV29B-300HE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 300 V 300 V 8A -40°C ~ 150°C 1.25 V @ 8 A
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