Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
AR3PJ-M3/86A

AR3PJ-M3/86A

DIODE AVALANCHE 600V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

2,340 -
AR3PJ-M3/86A

Datenblatt

Tape & Reel (TR) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 600 V 600 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
MUR160SHM4G

MUR160SHM4G

DIODE GEN PURP 600V 1A DO214AA

Taiwan Semiconductor Corporation

2,201 -
MUR160SHM4G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.25 V @ 1 A
AR3PG-M3/86A

AR3PG-M3/86A

DIODE AVALANCHE 400V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

3,986 -
AR3PG-M3/86A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 44pF @ 4V, 1MHz 140 ns 10 µA @ 400 V 400 V 1.8A (DC) -55°C ~ 175°C 1.6 V @ 3 A
VS-MBRS130-M3/5BT

VS-MBRS130-M3/5BT

DIODE SCHOTTKY 30V 1A SMB

Vishay General Semiconductor - Diodes Division

3,326 -
VS-MBRS130-M3/5BT

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 200pF @ 5V, 1MHz - 1 mA @ 30 V 30 V 1A -55°C ~ 125°C 420 mV @ 1 A
S5B

S5B

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

2,674 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
SK315B M4G

SK315B M4G

DIODE SCHOTTKY 150V 3A DO214AA

Taiwan Semiconductor Corporation

3,388 -
SK315B M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
S15MC

S15MC

DIODE GEN PURP 1KV 15A DO214AB

Taiwan Semiconductor Corporation

2,922 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06DHE3_A/73

RMPG06DHE3_A/73

DIODE GEN PURP 200V 1A MPG06

Vishay General Semiconductor - Diodes Division

2,444 -
RMPG06DHE3_A/73

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15KC

S15KC

DIODE GEN PURP 800V 15A DO214AB

Taiwan Semiconductor Corporation

3,453 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06GHE3_A/73

RMPG06GHE3_A/73

DIODE GEN PURP 400V 1A MPG06

Vishay General Semiconductor - Diodes Division

3,934 -
RMPG06GHE3_A/73

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15JC

S15JC

DIODE GEN PURP 600V 15A DO214AB

Taiwan Semiconductor Corporation

3,311 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
RMPG06JHE3_A/73

RMPG06JHE3_A/73

DIODE GEN PURP 600V 1A MPG06

Vishay General Semiconductor - Diodes Division

2,752 -
RMPG06JHE3_A/73

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 6.6pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.3 V @ 1 A
S15GC

S15GC

DIODE GEN PURP 400V 15A DO214AB

Taiwan Semiconductor Corporation

3,827 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 93pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 15A (DC) -55°C ~ 150°C 1.1 V @ 15 A
SK13B M4G

SK13B M4G

DIODE SCHOTTKY 30V 1A DO214AA

Taiwan Semiconductor Corporation

2,877 -
SK13B M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
RG 10AV

RG 10AV

DIODE GEN PURP 600V 1A AXIAL

Sanken

2,908 -
RG 10AV

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 500 µA @ 600 V 600 V 1A -40°C ~ 150°C 2 V @ 1 A
SK14B M4G

SK14B M4G

DIODE SCHOTTKY 40V 1A DO214AA

Taiwan Semiconductor Corporation

3,906 -
SK14B M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 1A -55°C ~ 125°C 500 mV @ 1 A
RG 2AV

RG 2AV

DIODE GEN PURP 600V 1A AXIAL

Sanken

2,808 -
RG 2AV

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 500 µA @ 600 V 600 V 1A -40°C ~ 150°C 2 V @ 1 A
SK16B M4G

SK16B M4G

DIODE SCHOTTKY 60V 1A DO214AA

Taiwan Semiconductor Corporation

2,322 -
SK16B M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 1A -55°C ~ 150°C 750 mV @ 1 A
RM 10BV

RM 10BV

DIODE GEN PURP 800V 1.2A AXIAL

Sanken

3,187 -
RM 10BV

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 800 V 800 V 1.2A -40°C ~ 150°C 910 mV @ 1.5 A
CMG05(TE12L,Q,M)

CMG05(TE12L,Q,M)

DIODE GEN PURP 400V 1A M-FLAT

Toshiba Semiconductor and Storage

2,969 -
CMG05(TE12L,Q,M)

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - - 10 µA @ 400 V 400 V 1A -40°C ~ 150°C 1.1 V @ 1 A
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