Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NTE6165

NTE6165

R-1600PRV 150A ANODE CASE

NTE Electronics, Inc

2,235 -
NTE6165

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 5 mA @ 1600 V 1600 V 150A -65°C ~ 190°C 1.1 V @ 200 A
RKP450KE#R0

RKP450KE#R0

PIN DIODE, 30V

Rochester Electronics, LLC

500,000 -
RKP450KE#R0

Datenblatt

Bulk RoHS - - Active - - - - - - - -
W1263YC160

W1263YC160

RECTIFIER DIODE

IXYS

2,405 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - 17 µs 30 mA @ 1600 V 1600 V 1263A -40°C ~ 175°C 2.12 V @ 3770 A
W1263YC250

W1263YC250

RECTIFIER DIODE

IXYS

3,951 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - 17 µs 30 mA @ 2500 V 2500 V 1263A -40°C ~ 175°C 2.12 V @ 3770 A
JTX1N5822US

JTX1N5822US

SCHOTTKYSM DIODE 40V, 3A, /620

Semtech Corporation

3,624 -
JTX1N5822US

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 3A -65°C ~ 125°C 500 mV @ 3 A
RURU10060

RURU10060

100A, 600V ULTRAFAST DIODE

Rochester Electronics, LLC

343 -
RURU10060

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 250 µA @ 600 V 600 V 100A -65°C ~ 175°C 1.6 V @ 100 A
NTE6110

NTE6110

R-600PRV 500A

NTE Electronics, Inc

3,535 -
NTE6110

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 600 V 600 V 500A -30°C ~ 190°C 1.4 V @ 500 A
NTE5884

NTE5884

R-600V 25A DO4 KK

NTE Electronics, Inc

147 -
NTE5884

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 1 mA @ 600 V 600 V 30A -40°C ~ 175°C 1.2 V @ 30 A
NTE6362

NTE6362

R-1400PRV 300A CATH CASE

NTE Electronics, Inc

2,727 -
NTE6362

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 30 mA @ 1400 V 1400 V 300A -40°C ~ 180°C -
NTE5885

NTE5885

R-600V 25A DO4 AK

NTE Electronics, Inc

105 -
NTE5885

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 1 mA @ 600 V 600 V 30A -40°C ~ 175°C 1.2 V @ 30 A
NTE6120

NTE6120

R-1600V 500A

NTE Electronics, Inc

3,748 -
NTE6120

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 1600 V 1600 V 500A -30°C ~ 190°C 1.4 V @ 500 A
NTE518

NTE518

R-SI 10KV 25MA

NTE Electronics, Inc

141 -
NTE518

Datenblatt

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 1 µA @ 10000 V 10 kV 25mA -55°C ~ 150°C 30 V @ 25 mA
NTE6112

NTE6112

R-1200PRV 500A

NTE Electronics, Inc

2,447 -
NTE6112

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 15 mA @ 1200 V 1200 V 500A -30°C ~ 190°C 1.4 V @ 500 A
VS-C20ET07T-M3

VS-C20ET07T-M3

DIODE SCHOTTKY 650V 20A TO220AC

Vishay General Semiconductor - Diodes Division

961 -
VS-C20ET07T-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 1.05nF @ 1V, 1MHz - 100 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
NTE6364

NTE6364

R-1600V 300A CATHODE CASE

NTE Electronics, Inc

2,206 -
NTE6364

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 30 mA @ 1600 V 1600 V 300A -40°C ~ 180°C -
UJ3D06520KSD

UJ3D06520KSD

650V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC

422 -
UJ3D06520KSD

Datenblatt

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 654pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
NTE6365

NTE6365

R-1600V 300A ANODE CASE

NTE Electronics, Inc

3,068 -
NTE6365

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 30 mA @ 1600 V 1600 V 300A -40°C ~ 180°C -
VS-C20CP07L-M3

VS-C20CP07L-M3

DIODE SCHOTTKY 650V 10A TO220AC

Vishay General Semiconductor - Diodes Division

500 -
VS-C20CP07L-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Silicon Carbide Schottky Active Through Hole 430pF @ 1V, 1MHz - 55 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.8 V @ 10 A
W1185LC450

W1185LC450

RECTIFIER DIODE

IXYS

2,991 -
Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 30 mA @ 4500 V 4500 V 1185A -55°C ~ 160°C 2.4 V @ 2420 A
NTE5826

NTE5826

R-400 PRV 50 A CATH CASE

NTE Electronics, Inc

2,399 -
NTE5826

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount 400pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 50A -65°C ~ 175°C 1 V @ 50 A
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