Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-6TQ035HN3

VS-6TQ035HN3

DIODE SCHOTTKY 35V 6A TO220AC

Vishay General Semiconductor - Diodes Division

2,318 -
VS-6TQ035HN3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 400pF @ 5V, 1MHz - 800 µA @ 35 V 35 V 6A -55°C ~ 175°C 600 mV @ 6 A
HS5A

HS5A

DIODE GEN PURP 50V 5A DO214AB

Taiwan Semiconductor Corporation

3,534 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
UGB8ATHE3_A/P

UGB8ATHE3_A/P

DIODE GEN PURP 50V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,718 -
UGB8ATHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 50 V 50 V 8A -55°C ~ 150°C 1 V @ 8 A
CD214C-B320R

CD214C-B320R

DIO SBD VRRM 20V 3A SMC

Bourns Inc.

2,987 -
CD214C-B320R

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 250pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 3A -55°C ~ 125°C 500 mV @ 3 A
UG8GT-E3/45

UG8GT-E3/45

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2,783 -
UG8GT-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 400 V 400 V 8A -40°C ~ 150°C 1.25 V @ 8 A
SS29

SS29

DIODE SCHOTTKY 90V 2A DO214AA

onsemi

2,952 -
SS29

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 90 V 90 V 2A -65°C ~ 125°C 850 mV @ 2 A
V20100S-M3/4W

V20100S-M3/4W

DIODE SCHOTTKY 20A 100V TO-220AB

Vishay General Semiconductor - Diodes Division

2,413 -
V20100S-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 350 µA @ 100 V 100 V 20A -40°C ~ 150°C 1.07 V @ 20 A
HS5B

HS5B

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

3,208 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
UGB8BTHE3_A/P

UGB8BTHE3_A/P

DIODE GEN PURP 100V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,803 -
UGB8BTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 100 V 100 V 8A -55°C ~ 150°C 1 V @ 8 A
CD214C-B340R

CD214C-B340R

DIO SBD VRRM 40V 3A SMC

Bourns Inc.

2,389 -
CD214C-B340R

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 180pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 500 mV @ 3 A
VF10150S-M3/4W

VF10150S-M3/4W

DIODE SCHOTTKY 10A 150V ITO220AB

Vishay General Semiconductor - Diodes Division

3,535 -
VF10150S-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.2 V @ 10 A
BYM13-20HE3/97

BYM13-20HE3/97

DIODE SCHOTTKY 20V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2,511 -
BYM13-20HE3/97

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
S10GC V7G

S10GC V7G

DIODE GEN PURP 400V 10A DO214AB

Taiwan Semiconductor Corporation

3,554 -
S10GC V7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 10A -55°C ~ 150°C 1.1 V @ 10 A
RFN20NS3STL

RFN20NS3STL

FAST RECOVERY DIODE : ROHM'S FAS

Rohm Semiconductor

3,948 -
Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 350 V 350 V 20A 150°C 1.35 V @ 20 A
UGB8CTHE3_A/P

UGB8CTHE3_A/P

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,207 -
UGB8CTHE3_A/P

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 1 V @ 8 A
SS810C-HF

SS810C-HF

DIODE SCHOTTKY 8A 100V SMC

Comchip Technology

3,192 -
SS810C-HF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 400pF @ 4V, 1MHz - 1 mA @ 100 V 100 V 8A -55°C ~ 150°C 850 mV @ 8 A
VF20120SG-M3/4W

VF20120SG-M3/4W

DIODE SCHOTTKY 20A 120V ITO220AB

Vishay General Semiconductor - Diodes Division

3,337 -
VF20120SG-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 250 µA @ 120 V 120 V 20A -40°C ~ 150°C 1.33 V @ 20 A
BYM13-30HE3/97

BYM13-30HE3/97

DIODE SCHOTTKY 30V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3,110 -
BYM13-30HE3/97

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 30 V 30 V 1A -55°C ~ 125°C 500 mV @ 1 A
S10KC V7G

S10KC V7G

DIODE GEN PURP 800V 10A DO214AB

Taiwan Semiconductor Corporation

3,541 -
S10KC V7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.1 V @ 10 A
MBRF1635-E3/45

MBRF1635-E3/45

DIODE SCHOTTKY 35V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

2,373 -
MBRF1635-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 35 V 35 V 16A -65°C ~ 150°C 630 mV @ 16 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER