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Dioden-Gleichrichter-Single
| Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
C3D04065ADIODE SCHOTTKY 650V 4A TO220-2 |
3,549 | - |
|
Datenblatt |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Through Hole | 251pF @ 0V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 13.5A (DC) | -55°C ~ 175°C | 1.8 V @ 4 A |
|
PMEG100T100ELPEZDIODE SCHOTTKY 100V 10A CFP15B |
3,906 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 1V, 1MHz | 22 ns | 5 µA @ 100 V | 100 V | 10A | 175°C | 810 mV @ 10 A |
|
SCS310AMCSHORTER RECOVERY TIME, ENABLING |
435 | - |
|
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 500pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A (DC) | 175°C (Max) | 1.5 V @ 10 A | |
|
V10P6-M3/86ADIODE SCHOTTKY 60V 4.3A TO277A |
1,321 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.9 mA @ 60 V | 60 V | 4.3A | -40°C ~ 150°C | 590 mV @ 10 A |
|
STPSC8065DDIODE SCHOTTKY 650V 8A TO220AC |
3,232 | - |
|
Datenblatt |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 540pF @ 0V, 1MHz | 0 ns | 105 µA @ 650 V | 650 V | 8A | -40°C ~ 175°C | 1.45 V @ 8 A |
|
RHRG5060DIODE GEN PURP 600V 50A TO247-2 |
2,554 | - |
|
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 250 µA @ 600 V | 600 V | 50A | -65°C ~ 175°C | 2.1 V @ 50 A | |
|
MURF860DIODE GEN PURP 600V 8A ITO220AC |
17,731 | - |
|
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.2 V @ 8 A | |
|
|
STPSC10065DDIODE SCHOTTKY 650V 10A TO220AC |
965 | - |
|
Datenblatt |
Tube | ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 670pF @ 0V, 1MHz | 0 ns | 130 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.45 V @ 10 A |
|
ST2080STRDIODE SCHOTTKY 80V TO277B |
2,038 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 80 V | 80 V | - | -55°C ~ 150°C | 700 mV @ 20 A | |
|
STTH30L06WDIODE GEN PURP 600V 30A DO247 |
600 | - |
|
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 90 ns | 25 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.55 V @ 30 A | |
|
1N5416 BK TIN/LEADRECTIFIER-FAST RECOVERY < |
1,990 | - |
|
Datenblatt |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 175pF @ 12V, 1MHz | 150 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 200°C | 1.1 V @ 3 A | |
|
SCS312AHGC9SHORTER RECOVERY TIME, ENABLING |
680 | - |
|
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 600pF @ 1V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 12A (DC) | 175°C (Max) | - | |
|
S3J V7GDIODE GEN PURP 600V 3A DO214AB |
1,696 | - |
|
Datenblatt |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
STPSC10H065DYDIODE SCHOTTKY 650V 10A TO220AC |
173 | - |
|
Datenblatt |
Tube | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 480pF @ 0V, 1MHz | - | 100 µA @ 650 V | 650 V | 10A | -40°C ~ 175°C | 1.75 V @ 10 A |
|
|
S3D V7GDIODE GEN PURP 200V 3A DO214AB |
1,667 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
VS-8EWF04S-M3DIODE GEN PURP 400V 8A TO252AA |
1,982 | - |
|
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 100 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
S3M V7GDIODE GEN PURP 1KV 3A DO214AB |
1,655 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
STTH30L06WYDIODE GEN PURP 600V 30A DO247 |
267 | - |
|
Datenblatt |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 90 ns | 25 µA @ 600 V | 600 V | 30A | -40°C ~ 175°C | 1.55 V @ 30 A |
|
SE12DJ-M3/IDIODE GEN PURP 600V 3.2A TO263AC |
1,145 | - |
|
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 90pF @ 4V, 1MHz | 3 µs | 20 µA @ 600 V | 600 V | 3.2A | -55°C ~ 175°C | 1.15 V @ 12 A |
|
|
C6D06065A6A 650V G6 ZREC SIC SCHOTTKY DIO |
399 | - |
|
Datenblatt |
Tube | Z-Rec® | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 394pF @ 0V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 24A (DC) | -55°C ~ 175°C | 1.5 V @ 6 A |
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