Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SE20PG-M3/84A

SE20PG-M3/84A

DIODE GEN PURP 400V 1.6A DO220AA

Vishay General Semiconductor - Diodes Division

2,070 -
SE20PG-M3/84A

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 13pF @ 4V, 1MHz 1.2 µs 5 µA @ 400 V 400 V 1.6A -55°C ~ 175°C 1.05 V @ 2 A
SS1P5L-M3/84A

SS1P5L-M3/84A

DIODE SCHOTTKY 50V 1A DO220AA

Vishay General Semiconductor - Diodes Division

3,800 -
SS1P5L-M3/84A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 100 µA @ 50 V 50 V 1A -55°C ~ 150°C 590 mV @ 1 A
UF1DHR0G

UF1DHR0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2,965 -
UF1DHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
RB068LAM150TR

RB068LAM150TR

DIODE SCHOTTKY 150V 2A PMDTM

Rohm Semiconductor

2,424 -
RB068LAM150TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 3 µA @ 150 V 150 V 2A 150°C (Max) 810 mV @ 2 A
UF1GHR0G

UF1GHR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,617 -
UF1GHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
RB162MM-40TFTR

RB162MM-40TFTR

RB162MM-40TF IS THE HIGH RELIABI

Rohm Semiconductor

2,190 -
RB162MM-40TFTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 1A 150°C (Max) 550 mV @ 1 A
UF1JHR0G

UF1JHR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

3,098 -
UF1JHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1KHR0G

UF1KHR0G

DIODE GEN PURP 800V 1A DO204AL

Taiwan Semiconductor Corporation

2,921 -
UF1KHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.7 V @ 1 A
UF1MHR0G

UF1MHR0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

3,309 -
UF1MHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 1000 V - 1A -55°C ~ 150°C 1.7 V @ 1 A
1N5817-B

1N5817-B

DIODE SCHOKKTY 20V 1A DO-41

Rectron USA

3,782 -
1N5817-B

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 110pF @ 4V, 1MHz - 200 µA @ 20 V 20 V 1A 150°C 450 mV @ 1 A
UF4004HR0G

UF4004HR0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

2,983 -
UF4004HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
PMEG10020ELR115

PMEG10020ELR115

100 V, 2 A LOW LEAKAGE CURRENT

Rochester Electronics, LLC

3,567 -
PMEG10020ELR115

Datenblatt

Bulk RoHS - - Active - - - - - - - -
UF4005HR0G

UF4005HR0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2,890 -
UF4005HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BAS70SL-FS

BAS70SL-FS

RECTIFIER, SCHOTTKY, 0.07A, 70V

Rochester Electronics, LLC

3,746 -
BAS70SL-FS

Datenblatt

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3pF @ 0V, 1MHz 8 ns 200 nA @ 50 V 70 V 70mA -55°C ~ 150°C 1 V @ 15 mA
NSVR02L40MX2WT5G

NSVR02L40MX2WT5G

40V LOW IR 150C TJMAX SCHOTTKY D

onsemi

2,059 -
NSVR02L40MX2WT5G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount, Wettable Flank 2pF @ 1V, 1MHz 4 ns 500 nA @ 40 V 40 V 200mA (DC) -55°C ~ 150°C 1.2 V @ 100 mA
R2000G

R2000G

DIODE GEN PURP 2000V 500MA DO41

Rectron USA

3,059 -
R2000G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 5 µA @ 2000 V 2000 V 500mA -65°C ~ 175°C 2 V @ 200 mA
HS1KLW RVG

HS1KLW RVG

DIODE GEN PURP 800V 1A SOD123W

Taiwan Semiconductor Corporation

3,118 -
HS1KLW RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 4V, 1MHz 75 ns 1 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.7 V @ 1 A
JANTX1N5552/TR

JANTX1N5552/TR

STD RECTIFIER

Microchip Technology

2,113 -
JANTX1N5552/TR

Datenblatt

Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 5A -65°C ~ 175°C 1.2 V @ 9 A
SS14L_R1_00001

SS14L_R1_00001

SMA, SKY

Panjit International Inc.

2,413 -
SS14L_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 1A -55°C ~ 125°C 420 mV @ 1 A
RS1B

RS1B

DIODE GEN PURP 100V 1A DO214AC

Taiwan Semiconductor Corporation

2,709 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A (DC) -55°C ~ 150°C 1.3 V @ 1 A
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