Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SBR2065D1-13

SBR2065D1-13

DIODE SBR 65V 20A TO252

Diodes Incorporated

8,981 -
SBR2065D1-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Super Barrier Active Surface Mount - - 400 µA @ 65 V 65 V 20A -55°C ~ 150°C 630 mV @ 20 A
ST1045AXTR

ST1045AXTR

DIODE SCHOTTKY 45V R-6

SMC Diode Solutions

3,188 -
ST1045AXTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 45 V 45 V - -55°C ~ 150°C 560 mV @ 10 A
MUR160G

MUR160G

DIODE GEN PURP 600V 1A AXIAL

onsemi

1,300 -
MUR160G

Datenblatt

Bulk SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.25 V @ 1 A
SS10P4HM3_A/H

SS10P4HM3_A/H

DIODE SCHOTTKY 40V 10A TO277A

Vishay General Semiconductor - Diodes Division

6,744 -
SS10P4HM3_A/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 750pF @ 4V, 1MHz - 800 µA @ 40 V 40 V 10A -55°C ~ 150°C 560 mV @ 10 A
SBR8U60P5-7

SBR8U60P5-7

DIODE SBR 60V 8A POWERDI5

Diodes Incorporated

11,053 -
SBR8U60P5-7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SBR® RoHS Standard Recovery >500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 600 µA @ 60 V 60 V 8A -65°C ~ 150°C 530 mV @ 8 A
SBR15U50SP5-13

SBR15U50SP5-13

DIODE SBR 50V 15A POWERDI5

Diodes Incorporated

51,570 -
SBR15U50SP5-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SBR® RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 500 µA @ 50 V 50 V 15A -65°C ~ 150°C 520 mV @ 15 A
SMLJ60S05-TP

SMLJ60S05-TP

DIODE GEN PURP 50V 6A DO214AB

Micro Commercial Co

5,063 -
SMLJ60S05-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 150pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 6A -55°C ~ 150°C 1 V @ 6 A
SBRT20M60SP5-7D

SBRT20M60SP5-7D

DIODE SBR 60V 20A POWERDI5

Diodes Incorporated

19,500 -
SBRT20M60SP5-7D

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchSBR RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 180 µA @ 60 V 60 V 20A -55°C ~ 150°C 570 mV @ 20 A
SBR8A60P5-13

SBR8A60P5-13

DIODE SBR 60V 8A POWERDI5

Diodes Incorporated

17,539 -
SBR8A60P5-13

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SBR® RoHS Fast Recovery =< 500ns, > 200mA (Io) Super Barrier Active Surface Mount - - 500 µA @ 60 V 60 V 8A -65°C ~ 175°C 620 mV @ 8 A
1N5406G

1N5406G

DIODE GEN PURP 600V 3A DO201AD

onsemi

11,565 -
1N5406G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 3A -65°C ~ 150°C 1 V @ 3 A
VS-5ECH06-M3/9AT

VS-5ECH06-M3/9AT

DIODE GEN PURP 600V 5A DO214AB

Vishay General Semiconductor - Diodes Division

13,757 -
VS-5ECH06-M3/9AT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 23 ns 3 µA @ 600 V 600 V 5A -55°C ~ 175°C 1.95 V @ 5 A
STTH3L06

STTH3L06

DIODE GEN PURP 600V 3A DO201AD

STMicroelectronics

10,354 -
STTH3L06

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 85 ns 3 µA @ 600 V 600 V 3A 175°C (Max) 1.3 V @ 3 A
1N5407G

1N5407G

DIODE GEN PURP 800V 3A AXIAL

onsemi

8,595 -
1N5407G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 800 V 800 V 3A -65°C ~ 150°C 1 V @ 3 A
PMEG045T150EIPDZ

PMEG045T150EIPDZ

DIODE SCHOTTKY 45V 15A CFP15

Nexperia USA Inc.

2,907 -
PMEG045T150EIPDZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1.7nF @ 1V, 1MHz 49 ns 98 µA @ 45 V 45 V 15A (DC) 175°C (Max) 510 mV @ 15 A
PMEG045V150EPDAZ

PMEG045V150EPDAZ

DIODE SCHOTTKY 45V 15A CFP15

Nexperia USA Inc.

2,724 -
PMEG045V150EPDAZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1870pF @ 1V, 1MHz 19 ns 900 µA @ 15 V 45 V 15A -65°C ~ 175°C 490 mV @ 15 A
V20PW10-M3/I

V20PW10-M3/I

DIODE SCHOTTKY 100V 20A SLIMDPAK

Vishay General Semiconductor - Diodes Division

12,650 -
V20PW10-M3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1510pF @ 4V, 1MHz - 500 µA @ 100 V 100 V 20A -40°C ~ 150°C 860 mV @ 20 A
P600G-E3/73

P600G-E3/73

DIODE GEN PURP 400V 6A P600

Vishay General Semiconductor - Diodes Division

5,954 -
P600G-E3/73

Datenblatt

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 2.5 µs 5 µA @ 400 V 400 V 6A -50°C ~ 150°C 900 mV @ 6 A
60S1-TP

60S1-TP

DIODE GEN PURP 100V 6A DO201AD

Micro Commercial Co

1,685 -
60S1-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 6A -55°C ~ 150°C 1 V @ 6 A
CMMR1-02 TR PBFREE

CMMR1-02 TR PBFREE

DIODE GEN PURP 200V 1A SOD123F

Central Semiconductor Corp

4,653 -
CMMR1-02 TR PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 6pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 1A -65°C ~ 150°C 1.1 V @ 1 A
1N5402G

1N5402G

DIODE GEN PURP 200V 3A DO201AD

onsemi

7,161 -
1N5402G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 200 V 200 V 3A -65°C ~ 150°C 1 V @ 3 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER