Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SJPD-L5

SJPD-L5

DIODE GEN PURP 500V 3A SJP

Sanken

3,352 -
SJPD-L5

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 15 µA @ 500 V 500 V 3A -40°C ~ 150°C 1.4 V @ 3 A
HS3FB M4G

HS3FB M4G

DIODE GEN PURP 300V 3A DO214AA

Taiwan Semiconductor Corporation

2,502 -
HS3FB M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1 V @ 3 A
RU 1CV

RU 1CV

DIODE GEN PURP 1KV 200MA AXIAL

Sanken

2,453 -
RU 1CV

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 400 ns 10 µA @ 1000 V 1000 V 200mA -40°C ~ 150°C 3 V @ 250 mA
BYM10-600HE3/97

BYM10-600HE3/97

DIODE GEN PURP 600V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2,758 -
BYM10-600HE3/97

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
SS35

SS35

DIODE SCHOTTKY 3A 50V DO-214AB

Taiwan Semiconductor Corporation

2,433 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 50 V 50 V 3A (DC) -55°C ~ 150°C 750 mV @ 3 A
ES1CL RVG

ES1CL RVG

DIODE GEN PURP 150V 1A SUB SMA

Taiwan Semiconductor Corporation

2,571 -
ES1CL RVG

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 1A -55°C ~ 150°C 950 mV @ 1 A
SJPJ-L3

SJPJ-L3

DIODE SCHOTTKY 30V 3A SJP

Sanken

3,892 -
SJPJ-L3

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 30 V 30 V 3A -40°C ~ 150°C 450 mV @ 3 A
HS3GB M4G

HS3GB M4G

DIODE GEN PURP 400V 3A DO214AA

Taiwan Semiconductor Corporation

2,159 -
HS3GB M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
RU 2BV

RU 2BV

DIODE GEN PURP 800V 1A AXIAL

Sanken

3,121 -
RU 2BV

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 800 V 800 V 1A -40°C ~ 150°C 1.5 V @ 1 A
BYM10-800HE3/97

BYM10-800HE3/97

DIODE GEN PURP 800V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3,126 -
BYM10-800HE3/97

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 8pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.2 V @ 1 A
SSL32 V6G

SSL32 V6G

DIODE SCHOTTKY 3A 20V DO-214AB

Taiwan Semiconductor Corporation

2,266 -
SSL32 V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 20 V 20 V 3A -55°C ~ 125°C -
ES1DL RUG

ES1DL RUG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3,954 -
ES1DL RUG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 1V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
SJPL-H6

SJPL-H6

DIODE GEN PURP 600V 2A SJP

Sanken

2,972 -
SJPL-H6

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 50 µA @ 600 V 600 V 2A -40°C ~ 150°C 1.5 V @ 2 A
HS3JB M4G

HS3JB M4G

DIODE GEN PURP 600V 3A DO214AA

Taiwan Semiconductor Corporation

2,999 -
HS3JB M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
RU 2CV

RU 2CV

DIODE GEN PURP 1KV 800MA AXIAL

Sanken

2,080 -
RU 2CV

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 1000 V 1000 V 800mA -40°C ~ 150°C 1.5 V @ 1 A
SIGC156T60NR2CYX1SA1

SIGC156T60NR2CYX1SA1

DIODE GEN PURPOSE 600V

Infineon Technologies

2,166 -
Bulk RoHS - - Obsolete - - - - - - - -
GS1BE-TP

GS1BE-TP

DIODE GEN PURP 100V 1A DO214AC

Micro Commercial Co

2,768 -
GS1BE-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 15pF @ 4V, 1MHz 2 µs 5 µA @ 100 V 100 V 1A -55°C ~ 150°C -
SS35-1HE3_A/I

SS35-1HE3_A/I

DIODE SCHOTTKY 50V 3A SMD

Vishay General Semiconductor - Diodes Division

3,342 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 3A -55°C ~ 150°C 750 mV @ 3 A
F1T1GH

F1T1GH

DIODE FAST REC 1A 50V TS-1

Taiwan Semiconductor Corporation

2,406 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A (DC) -55°C ~ 150°C 1.3 V @ 1 A
MBRF2035H

MBRF2035H

DIODE SCHOTTKY 35V 20A ITO220

Taiwan Semiconductor Corporation

2,003 -
Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 35 V 35 V 20A (DC) -55°C ~ 150°C 750 mV @ 20 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER