Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
S4PMHM3_A/H

S4PMHM3_A/H

DIODE GEN PURP 1KV 4A TO277A

Vishay General Semiconductor - Diodes Division

2,433 -
S4PMHM3_A/H

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.1 V @ 4 A
SE80PWD-M3/I

SE80PWD-M3/I

DIODE GEN PURP 200V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2,100 -
SE80PWD-M3/I

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 200 V 200 V 8A -40°C ~ 175°C 1.12 V @ 8 A
BYT51K-TR

BYT51K-TR

DIODE AVALANCHE 800V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3,201 -
BYT51K-TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 800 V 800 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
S5MBHM4G

S5MBHM4G

DIODE GEN PURP 5A DO214AA

Taiwan Semiconductor Corporation

3,706 -
S5MBHM4G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz - 10 µA @ 1000 V - 5A -55°C ~ 150°C 1.1 V @ 5 A
SDURD1520TR

SDURD1520TR

DIODE GEN PURP 200V 15A DPAK

SMC Diode Solutions

2,927 -
SDURD1520TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 10 µA @ 200 V 200 V 15A -55°C ~ 150°C 1.05 V @ 15 A
CMOD4448 BK PBFREE

CMOD4448 BK PBFREE

DIODE GEN PURP 75V 250MA SOD523

Central Semiconductor Corp

3,514 -
CMOD4448 BK PBFREE

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 25 nA @ 20 V 75 V 250mA -65°C ~ 150°C 1 V @ 100 mA
SS3P6LHM3_A/I

SS3P6LHM3_A/I

DIODE SCHOTTKY 60V 3A TO277A

Vishay General Semiconductor - Diodes Division

2,792 -
SS3P6LHM3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 150 µA @ 50 V 60 V 3A -55°C ~ 150°C 600 mV @ 3 A
SE80PWG-M3/I

SE80PWG-M3/I

DIODE GEN PURP 400V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

3,418 -
SE80PWG-M3/I

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 400 V 400 V 8A -40°C ~ 175°C 1.12 V @ 8 A
6A05G

6A05G

DIODE GEN PURP 6A 50V R-6

Taiwan Semiconductor Corporation

3,652 -
Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A (DC) -55°C ~ 150°C 1.1 V @ 6 A
BYT53C-TR

BYT53C-TR

DIODE AVALANCHE 150V 1.9A SOD57

Vishay General Semiconductor - Diodes Division

2,714 -
BYT53C-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 50 ns 5 µA @ 150 V 150 V 1.9A -55°C ~ 175°C 1.1 V @ 1 A
US1KE-TP

US1KE-TP

DIODE GP ULT FAST 1A DO214AC

Micro Commercial Co

3,368 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 17pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 1A -50°C ~ 150°C 1.7 V @ 1 A
SF34G-TP

SF34G-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

3,316 -
SF34G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns - 200 V 3A -65°C ~ 150°C -
SRAF16100

SRAF16100

DIODE SCHOTTKY 100V 16A ITO220AC

Taiwan Semiconductor Corporation

3,883 -
Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 16A (DC) -55°C ~ 150°C 920 mV @ 16 A
S12GC V6G

S12GC V6G

DIODE GEN PURP 400V 12A DO214AB

Taiwan Semiconductor Corporation

2,440 -
S12GC V6G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 12A -55°C ~ 150°C -
FR157S-AP

FR157S-AP

DIODE GPP FAST 1.5A DO-41

Micro Commercial Co

3,313 -
FR157S-AP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 500 ns - 1000 V 1.5A -55°C ~ 150°C -
ES2A-M3/5BT

ES2A-M3/5BT

DIODE GEN PURP 50V 2A DO214AA

Vishay General Semiconductor - Diodes Division

2,249 -
ES2A-M3/5BT

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 30 ns 10 µA @ 50 V 50 V 2A -55°C ~ 150°C 900 mV @ 2 A
RBR2MM60CTFTR

RBR2MM60CTFTR

DIODE (RECTIFIER FRD) 60V-VR 2A-

Rohm Semiconductor

2,917 -
RBR2MM60CTFTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 120 µA @ 60 V 60 V 2A 150°C (Max) 550 mV @ 2 A
S5GHM3/57T

S5GHM3/57T

DIODE GP 400V 5A DO214AB

Vishay General Semiconductor - Diodes Division

3,927 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 4V, 1MHz 2.5 µs 10 µA @ 400 V 400 V 5A -55°C ~ 150°C 1.15 V @ 5 A
SRAF1640

SRAF1640

DIODE SCHOTTKY 40V 16A ITO220AC

Taiwan Semiconductor Corporation

2,644 -
Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 16A (DC) -55°C ~ 125°C 550 mV @ 16 A
SE80PWJ-M3/I

SE80PWJ-M3/I

DIODE GEN PURP 600V 8A SLIMDPAK

Vishay General Semiconductor - Diodes Division

2,889 -
SE80PWJ-M3/I

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 58pF @ 4V, 1MHz 2.4 µs 15 µA @ 600 V 600 V 8A -40°C ~ 175°C 1.12 V @ 8 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER