Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MUR310S R6

MUR310S R6

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2,347 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 875 mV @ 3 A
UF4003

UF4003

DIODE GEN PURP 200V 1A DO-41

Taiwan Semiconductor Corporation

2,082 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A (DC) -55°C ~ 150°C 1 V @ 1 A
FR106-AP

FR106-AP

DIODE GPP 1A DO-41

Micro Commercial Co

3,370 -
FR106-AP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 5 ns - 800 V 1A -55°C ~ 150°C -
SR005

SR005

DIODE SCHOTTKY 0.5A 90V DO-41

Taiwan Semiconductor Corporation

2,602 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 80pF @ 4V, 1MHz - 500 µA @ 50 V 50 V 500mA (DC) -55°C ~ 150°C 700 mV @ 500 mA
ES3B

ES3B

DIODE GEN PURP 100V 3A DO214AB

Taiwan Semiconductor Corporation

2,901 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
HS3K R7

HS3K R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,701 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
UGF5J

UGF5J

DIODE GEN PURP 5A 600V ITO-220AC

Taiwan Semiconductor Corporation

2,798 -
Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 30 µA @ 600 V 600 V 5A (DC) -55°C ~ 150°C 3 V @ 5 A
FR107-AP

FR107-AP

DIODE GPP 1A DO-41

Micro Commercial Co

3,890 -
FR107-AP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 500 ns - 1000 V 1A -55°C ~ 150°C -
GS1B

GS1B

SMT GLASS PASSIVATED RECTIFIER

SMC Diode Solutions

3,054 -
GS1B

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 2.5 µs 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.1 V @ 1 A
2A01GH

2A01GH

DIODE GEN PURP 2A 50V DO-15

Taiwan Semiconductor Corporation

3,602 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 2A (DC) -55°C ~ 150°C 1.1 V @ 2 A
SK85CH

SK85CH

DIODE SCHOTTKY 50V 8A DO214AB

Taiwan Semiconductor Corporation

2,849 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 50 V 50 V 8A (DC) -55°C ~ 150°C 750 mV @ 8 A
ESH3B R6

ESH3B R6

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

3,438 -
Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 100 V 100 V 3A -55°C ~ 175°C 900 mV @ 3 A
SR805H

SR805H

DIODE SCHOTTKY 8A 50V DO-201AD

Taiwan Semiconductor Corporation

2,641 -
Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A (DC) -55°C ~ 150°C 700 mV @ 8 A
FR151-AP

FR151-AP

DIODE GPP FAST 1.5A DO-15

Micro Commercial Co

2,893 -
FR151-AP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 20pF @ 4V, 1MHz 150 ns - 50 V 1.5A -55°C ~ 150°C -
ES1J R3G

ES1J R3G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

2,426 -
ES1J R3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 18pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BY520-14E-E3/54

BY520-14E-E3/54

DIODE GEN PURP 1.4KV 500MA DO204

Vishay General Semiconductor - Diodes Division

3,987 -
BY520-14E-E3/54

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 1400 V 500mA -65°C ~ 175°C -
VSSA3L6S-M3/5AT

VSSA3L6S-M3/5AT

DIODE SCHOTTKY 60V 2.5A DO214AC

Vishay General Semiconductor - Diodes Division

2,659 -
VSSA3L6S-M3/5AT

Datenblatt

Tape & Reel (TR) TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 395pF @ 4V, 1MHz - 1.5 mA @ 60 V 60 V 2.5A -55°C ~ 150°C 580 mV @ 3 A
UG4B-E3/73

UG4B-E3/73

DIODE GEN PURP 100V 4A DO201AD

Vishay General Semiconductor - Diodes Division

3,333 -
UG4B-E3/73

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 30 ns 5 µA @ 100 V 100 V 4A -55°C ~ 150°C 950 mV @ 4 A
HER306GT-G

HER306GT-G

DIODE GEN PURP 600V 3A DO201AA

Comchip Technology

2,689 -
HER306GT-G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.3 V @ 3 A
FR304G A0G

FR304G A0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3,446 -
FR304G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER