Dioden-Gleichrichter-Single

制造商 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ 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全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
SF1008GHC0G

SF1008GHC0G

DIODE GEN PURP 600V 10A TO220AB

Taiwan Semiconductor Corporation

2,408 -
SF1008GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 5 A
SS34LHMHG

SS34LHMHG

DIODE SCHOTTKY 40V 3A SUB SMA

Taiwan Semiconductor Corporation

3,604 -
SS34LHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 3A -55°C ~ 125°C 500 mV @ 3 A
SR804 A0G

SR804 A0G

DIODE SCHOTTKY 40V 8A DO201AD

Taiwan Semiconductor Corporation

2,793 -
SR804 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 8A -55°C ~ 125°C 550 mV @ 8 A
S1KL MHG

S1KL MHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation

3,156 -
S1KL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF37GHB0G

SF37GHB0G

DIODE GEN PURP 500V 3A DO201AD

Taiwan Semiconductor Corporation

3,399 -
SF37GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1004GHC0G

SFAF1004GHC0G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

3,526 -
SFAF1004GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 170pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 10A -55°C ~ 150°C 975 mV @ 10 A
SF1601G C0G

SF1601G C0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation

3,433 -
SF1601G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
SS36L M2G

SS36L M2G

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

2,589 -
SS36L M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR804HA0G

SR804HA0G

DIODE SCHOTTKY 40V 8A DO201AD

Taiwan Semiconductor Corporation

2,646 -
SR804HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 8A -55°C ~ 125°C 550 mV @ 8 A
S1KLHM2G

S1KLHM2G

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation

3,463 -
S1KLHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38G B0G

SF38G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

3,377 -
SF38G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005G C0G

SFAF1005G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

2,494 -
SFAF1005G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601GHC0G

SF1601GHC0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation

2,339 -
SF1601GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 975 mV @ 8 A
SS36L MHG

SS36L MHG

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

2,215 -
SS36L MHG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
SR805 A0G

SR805 A0G

DIODE SCHOTTKY 50V 8A DO201AD

Taiwan Semiconductor Corporation

2,056 -
SR805 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 8A -55°C ~ 150°C 700 mV @ 8 A
S1KLHMHG

S1KLHMHG

DIODE GEN PURP 800V 1A SUB SMA

Taiwan Semiconductor Corporation

3,636 -
S1KLHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 800 V 800 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF38GHB0G

SF38GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2,013 -
SF38GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
SFAF1005GHC0G

SFAF1005GHC0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

3,156 -
SFAF1005GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 140pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 10A -55°C ~ 150°C 1.3 V @ 10 A
SF1601PT C0G

SF1601PT C0G

DIODE GEN PURP 50V 16A TO247AD

Taiwan Semiconductor Corporation

3,740 -
SF1601PT C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 950 mV @ 8 A
SS36LHM2G

SS36LHM2G

DIODE SCHOTTKY 60V 3A SUB SMA

Taiwan Semiconductor Corporation

3,234 -
SS36LHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 60 V 60 V 3A -55°C ~ 150°C 750 mV @ 3 A
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER