Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2,069 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P |
3,360 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI |
2,591 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2,878 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2,614 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2,438 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2,347 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
G3S06540BSIC SCHOTTKY DIODE 650V 40A 3-PI |
2,423 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 60A (DC) | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G5S12030BMSIC SCHOTTKY DIODE 1200V 30A 3-P |
3,075 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 55A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
DBA200UA40DIODE MODULE 400V 200A |
2,104 | - |
|
Datenblatt |
Tube | - | Active | 2 Independent | Standard | 400 V | 100A | 1.2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 100 mA @ 400 V | -40°C ~ 150°C | Chassis Mount | |
DBA200YA40DIODE MODULE 400V 200A |
3,297 | - |
|
Datenblatt |
Tray | - | Active | 2 Independent | Standard | 400 V | 100A | 1.35 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 6 mA @ 400 V | -40°C ~ 150°C | Chassis Mount | |
DBA200WA40DIODE MODULE 400V 200A |
2,172 | - |
|
Datenblatt |
Tube | - | Active | 2 Independent | Standard | 400 V | 100A | 1.2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 4 mA @ 400 V | -40°C ~ 150°C | Chassis Mount | |
G3S17010BSIC SCHOTTKY DIODE 1700V 10A 3-P |
2,967 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1700 V | 29.5A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | Through Hole | |
DBA200WA60DIODE MODULE 600V 200A |
2,320 | - |
|
Datenblatt |
Tube | - | Active | 2 Independent | Standard | 600 V | 100A | 1.5 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 4 mA @ 600 V | -40°C ~ 150°C | Chassis Mount | |
DBA200UA60DIODE MODULE 600V 200A |
2,701 | - |
|
Datenblatt |
Tube | - | Active | 2 Independent | Standard | 600 V | 100A | 1.35 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 100 mA @ 600 V | -40°C ~ 150°C | Chassis Mount | |
UC1611J883BUC1611 QUAD SCHOTTKY DIODE ARRAY |
2,163 | - |
|
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | |
G3S06560BSIC SCHOTTKY DIODE 650V 4A 3-PIN |
2,544 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 95A (DC) | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole | |
G3S12030BSIC SCHOTTKY DIODE 1200V 30A 3-P |
2,618 | - |
|
Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 42A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole | |
DD60KB160DIODE MODULE 1600V 60A |
3,456 | - |
|
Datenblatt |
Tray | - | Active | 1 Pair Series Connection | Standard | 1600 V | 60A | 1.35 V @ 180 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount | |
DD60KB80DIODE MODULE 800V 60A |
3,426 | - |
|
Datenblatt |
Tray | - | Active | 1 Pair Series Connection | Standard | 800 V | 60A | 1.35 V @ 180 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 800 V | -40°C ~ 150°C | Chassis Mount |