Dioden-Bridge-Gleichrichter

制造商 Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)











































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
MB110S

MB110S

BRIDGE RECT 1PHASE 100V 1A MBS

MDD

2,313 -
MB110S

Datenblatt

Tape & Reel (TR) MBS Active Single Phase Standard 100 V 1 A 900 mV @ 1 A 500 µA @ 100 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
GBJ20G

GBJ20G

20A -400V - GBJ(5S) - BRIDGE

SURGE

250 -
GBJ20G

Datenblatt

Bag - Active Single Phase Standard 400 V 3.5 A 1 V @ 10 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ20M

GBJ20M

20A -1000V - GBJ(5S) - BRIDGE

SURGE

250 -
GBJ20M

Datenblatt

Bag - Active Single Phase Standard 1 kV 3.5 A 1 V @ 10 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ20J

GBJ20J

20A -600V - GBJ(5S) - BRIDGE

SURGE

250 -
GBJ20J

Datenblatt

Bag - Active Single Phase Standard 600 V 3.5 A 1 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
BR802

BR802

STD 8A, CASE TYPE: BR10

EIC SEMICONDUCTOR INC.

2,211 -
BR802

Datenblatt

Bag - Active Single Phase Standard 200 V 8 A 1 V @ 4 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
KBPC610

KBPC610

RECT BRIDGE 1000V 6A KBPC6

Yangzhou Yangjie Electronic Technology Co.,Ltd

101 -
KBPC610

Datenblatt

Box - Active Single Phase Standard 1 kV 6 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, KBPC-6
BR1000

BR1000

STD 10A, CASE TYPE: BR10

EIC SEMICONDUCTOR INC.

2,118 -
BR1000

Datenblatt

Bag - Active Single Phase Standard 50 V 10 A 1.1 V @ 5 A 10 µA @ 50 V -40°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
BR1002

BR1002

STD 10A, CASE TYPE: BR10

EIC SEMICONDUCTOR INC.

3,956 -
BR1002

Datenblatt

Bag - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-Square, BR-10
GBU610

GBU610

RECT BRIDGE 1000V 6A GBU

Yangzhou Yangjie Electronic Technology Co.,Ltd

969 -
GBU610

Datenblatt

Tube - Active Single Phase Standard 1 kV 6 A 1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
GBU608

GBU608

RECT BRIDGE 800V 6A GBU

Yangzhou Yangjie Electronic Technology Co.,Ltd

861 -
GBU608

Datenblatt

Tube - Active Single Phase Standard 800 V 6 A 1 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, GBU
KBL400

KBL400

STD 4A, CASE TYPE: KBL

EIC SEMICONDUCTOR INC.

900 -
KBL400

Datenblatt

Bag - Active Single Phase Standard 50 V 4 A 1.1 V @ 4 A 10 µA @ 50 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
RBV800

RBV800

BRIGDE RECTIFIER 8A 50V, CASE TY

EIC SEMICONDUCTOR INC.

700 -
RBV800

Datenblatt

Bag - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 10 µA @ 50 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
RBV606

RBV606

BRIGDE RECTIFIER 6A 600V, CASE T

EIC SEMICONDUCTOR INC.

900 -
RBV606

Datenblatt

Bag - Active Single Phase Standard 600 V 6 A 1 V @ 3 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
GBU1010

GBU1010

Bridge Rectifier GBU 1KV 10A

MDD

3,428 -
GBU1010

Datenblatt

Box GBU Active Single Phase Standard 1 kV 10 A 1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU606

GBU606

GLASS PASSIVATED BRIDGE RECTIFIE

HY Electronic (Cayman) Limited

2,473 -
GBU606

Datenblatt

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
RBV806

RBV806

BRIGDE RECTIFIER 8A 600V, CASE T

EIC SEMICONDUCTOR INC.

100 -
RBV806

Datenblatt

Bag - Active Single Phase Standard 600 V 8 A 1 V @ 4 A 10 µA @ 600 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, RBV-25
KBU1010

KBU1010

RECT BRIDGE 1000V 10A KBU

Yangzhou Yangjie Electronic Technology Co.,Ltd

261 -
KBU1010

Datenblatt

Box - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP, KBU
KBPC610

KBPC610

BRIDGE RECT 1P 1KV 6A KBPC

MDD

3,269 -
KBPC610

Datenblatt

Box KBPC Active Single Phase Standard 1 kV 250 mA 1.1 V @ 3 A 10 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole 4-Square, KBPC
GBU6G

GBU6G

1BRect, 400V, 6A

Diotec Semiconductor

800 -
GBU6G

Datenblatt

Box - Active Single Phase Standard 400 V 4.2 A 1 V @ 6 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J

GBU4J

1BRect, 600V, 4A

Diotec Semiconductor

2,063 -
GBU4J

Datenblatt

Box - Active Single Phase Standard 600 V 2.8 A 1 V @ 4 A 5 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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