Dioden-Bridge-Gleichrichter

制造商 Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)











































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBJ2508-G

GBJ2508-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

3,939 -
GBJ2508-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-03-G

GBJ2508-03-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

2,907 -
GBJ2508-03-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-04-G

GBJ2508-04-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

2,718 -
GBJ2508-04-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-05-G

GBJ2508-05-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

2,867 -
GBJ2508-05-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2508-06-G

GBJ2508-06-G

BRIDGE RECT 1PHASE 800V 25A GBJ

Comchip Technology

2,185 -
GBJ2508-06-G

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
TS35P05GH

TS35P05GH

BRIDGE RECT 1P 600V 35A TS-6P

Taiwan Semiconductor Corporation

2,320 -
TS35P05GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P06GH

TS35P06GH

BRIDGE RECT 1P 800V 35A TS-6P

Taiwan Semiconductor Corporation

3,049 -
TS35P06GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS35P07GH

TS35P07GH

BRIDGE RECT 1PHASE 1KV 35A TS-6P

Taiwan Semiconductor Corporation

2,282 -
TS35P07GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 35 A 1.1 V @ 17.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P06GH

TS40P06GH

BRIDGE RECT 1P 800V 40A TS-6P

Taiwan Semiconductor Corporation

2,263 -
TS40P06GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 40 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS40P07GH

TS40P07GH

BRIDGE RECT 1PHASE 1KV 40A TS-6P

Taiwan Semiconductor Corporation

2,468 -
TS40P07GH

Datenblatt

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 40 A 1.1 V @ 20 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBJ2510-G

GBJ2510-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology

3,551 -
GBJ2510-G

Datenblatt

Tube - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-03-G

GBJ2510-03-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology

2,352 -
GBJ2510-03-G

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-04-G

GBJ2510-04-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology

3,105 -
GBJ2510-04-G

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-05-G

GBJ2510-05-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology

2,472 -
GBJ2510-05-G

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBJ2510-06-G

GBJ2510-06-G

BRIDGE RECT 1PHASE 1KV 25A GBJ

Comchip Technology

3,042 -
GBJ2510-06-G

Datenblatt

Bulk - Active Single Phase Standard 1 kV 25 A 1 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ
GBU1002

GBU1002

BRIDGE RECT 1PHASE 200V 10A GBU

Diodes Incorporated

3,797 -
GBU1002

Datenblatt

Tube - Active Single Phase Standard 200 V 10 A 1 V @ 5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU2006-E3/51

BU2006-E3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

3,859 -
BU2006-E3/51

Datenblatt

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
DFB2520

DFB2520

BRIDGE RECT 1PHASE 200V 25A TS6P

onsemi

3,903 -
DFB2520

Datenblatt

Tube,Tube - Active Single Phase Standard 200 V 25 A 1.1 V @ 25 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
BU1206-M3/45

BU1206-M3/45

BRIDGE RECT 1P 600V 12A BU

Vishay General Semiconductor - Diodes Division

3,938 -
BU1206-M3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-M3/45

BU1208-M3/45

BRIDGE RECT 1P 800V 12A BU

Vishay General Semiconductor - Diodes Division

3,982 -
BU1208-M3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
Total 8096 Record«Prev1... 161162163164165166167168...405Next»
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER