Transistoren von JFETs

制造商 Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType























































































































































































































































































































































































































































































































































































































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Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
UJ3N120035K3S

UJ3N120035K3S

1200V 35 MOHM SIC JFET, G3, N-ON

UnitedSiC

2,010 -
UJ3N120035K3S

Datasheet

Tube - Active N-Channel 1200 V 1200 V - 63 A - 2145pF @ 100V 45 mOhms 429 W -55°C ~ 175°C (TJ) Through Hole
UF3N170400B7S

UF3N170400B7S

JFET 1700V SIC

UnitedSiC

3,190 -
UF3N170400B7S

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel 1.7 V 1.7 V 2.2 µA @ 1.7 V 6.8 A - 225pF @ 100V 500 mOhms 68 W -55°C ~ 175°C (TJ) Surface Mount
UJ3N065080K3S

UJ3N065080K3S

650V 80 MOHM SIC JFET, G3, N-ON

UnitedSiC

2,750 -
UJ3N065080K3S

Datasheet

Tube - Active N-Channel 650 V 650 V - 32 A - 630pF @ 100V 95 mOhms 190 W -55°C ~ 175°C (TJ) Through Hole
UJ3N120070K3S

UJ3N120070K3S

1200V 70 MOHM SIC JFET, G3, N-ON

UnitedSiC

2,625 -
UJ3N120070K3S

Datasheet

Tube - Active N-Channel 1200 V 1200 V - 33.5 A - 985pF @ 100V 90 mOhms 254 W -55°C ~ 175°C (TJ) Through Hole
UJ3N065025K3S

UJ3N065025K3S

650V 25 MOHM SIC JFET, G3, N-ON

UnitedSiC

2,364 -
UJ3N065025K3S

Datasheet

Tube - Active N-Channel 650 V 650 V - 85 A - 2360pF @ 100V 33 mOhms 441 W -55°C ~ 175°C (TJ) Through Hole
UJ3N120065K3S

UJ3N120065K3S

1200V/65MOHM, SIC, N-ON JFET, G3

UnitedSiC

3,515 -
UJ3N120065K3S

Datasheet

Tube - Active N-Channel 1.2 V 1.2 V 5 µA @ 1.2 V 34 A - 1008pF @ 100V 55 mOhms 254 W -55°C ~ 175°C (TJ) Through Hole
HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER