制造商 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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FBG20N18BCGAN FET HEMT200V18A COTS 4FSMD-B |
2,590 | - |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 200 V | 18A (Tc) | 5V | 26mOhm @ 18A, 5V | 2.5V @ 3mA | 6 nC @ 5 V | +6V, -4V | 900 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
FBG10N30BCGAN FET HEMT100V30A COTS 4FSMD-B |
2,189 | - |
|
Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 5mA | 11 nC @ 5 V | +6V, -4V | 1000 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
FBG10N05ACGAN FET HEMT 100V5A COTS 4FSMD-A |
3,427 | - |
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Datasheet |
Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 5A (Tc) | 5V | 44mOhm @ 5A, 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | +6V, -4V | 233 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | |
EPC7014UBCGAN FET HEMT 60V 1A COTS 4UB |
3,816 | - |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 60 V | 1A (Tc) | 5V | 580mOhm @ 1A, 5V | 2.5V @ 140µA | - | +7V, -4V | 22 pF @ 30 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
FBG04N08ACGAN FET HEMT 40V 8A COTS 4FSMD-A |
121 | - |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 8A (Tc) | 5V | 24mOhm @ 8A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | +6V, -4V | 312 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | ||
FBG04N30BCGAN FET HEMT 40V30A COTS 4FSMD-B |
3,478 | - |
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Datasheet |
Tray | FSMD-B | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 30A (Tc) | 5V | 9mOhm @ 30A, 5V | 2.5V @ 9mA | 11.4 nC @ 5 V | +6V, -4V | 1300 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | |
FBG30N04CCGAN FET HEMT 300V4A COTS 4FSMD-C |
3,246 | - |
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Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 300 V | 4A (Tc) | 5V | 404mOhm @ 4A, 5V | 2.8V @ 600µA | 2.6 nC @ 5 V | +6V, -4V | 450 pF @ 150 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |