Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GA50JT12-247TRANS SJT 1200V 100A TO247AB |
2,107 | - |
|
![]() Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209 pF @ 800 V | - | 583W (Tc) | 175°C (TJ) | Through Hole |
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G3R350MT12DSIC MOSFET N-CH 11A TO247-3 |
2,555 | - |
|
![]() Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G3R160MT12DSIC MOSFET N-CH 22A TO247-3 |
1,787 | - |
|
![]() Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 123W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G3R75MT12DSIC MOSFET N-CH 41A TO247-3 |
2,658 | - |
|
![]() Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G2R50MT33K3300V 50M TO-247-4 SIC MOSFET |
3,394 | - |
|
![]() Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | Standard | 536W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET |
2,704 | - |
|
![]() Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole |
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G3R60MT07J750V 60M TO-263-7 G3R SIC MOSFET |
2,444 | - |
|
![]() Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
3,983 | - |
|
![]() Datasheet |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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GA10JT12-263TRANS SJT 1200V 25A |
3,481 | - |
|
![]() Datasheet |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
|
GA05JT03-46TRANS SJT 300V 9A TO46 |
3,602 | - |
|
![]() Datasheet |
Bulk | - | Not For New Designs | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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GA04JT17-247TRANS SJT 1700V 4A TO247AB |
3,634 | - |
|
![]() Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole |
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GA16JT17-247TRANS SJT 1700V 16A TO247AB |
2,413 | - |
|
![]() Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole |
|
2N7635-GATRANS SJT 650V 4A TO257 |
3,165 | - |
|
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | |
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2N7636-GATRANS SJT 650V 4A TO276 |
2,583 | - |
|
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | |
|
2N7637-GATRANS SJT 650V 7A TO257 |
3,422 | - |
|
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720 pF @ 35 V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | |
|
2N7638-GATRANS SJT 650V 8A TO276 |
3,359 | - |
|
![]() Datasheet |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720 pF @ 35 V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount |
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2N7639-GATRANS SJT 650V 15A TO257 |
2,531 | - |
|
![]() Datasheet |
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534 pF @ 35 V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole |
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2N7640-GATRANS SJT 650V 16A TO276 |
2,578 | - |
|
Bulk | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534 pF @ 35 V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | |
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GA03JT12-247TRANS SJT 1200V 3A TO247AB |
2,914 | - |
|
![]() Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole |
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GA06JT12-247TRANS SJT 1200V 6A TO247AB |
2,672 | - |
|
![]() Datasheet |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | Through Hole |