Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
APT34N80B2C3GMOSFET N-CH 800V 34A T-MAX |
2,210 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT34F60BMOSFET N-CH 600V 36A TO247 |
3,422 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT34M60SMOSFET N-CH 600V 36A D3PAK |
2,876 | - |
|
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
APT5010LFLLGMOSFET N-CH 500V 46A TO264 |
3,811 | - |
|
Datasheet |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT7F120BMOSFET N-CH 1200V 7A TO247 |
3,635 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 7A (Tc) | 10V | 2.9Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MSC040SMA120SSICFET N-CH 1200V 64A TO268 |
2,862 | - |
|
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W | -55°C ~ 175°C (TJ) | Surface Mount | |
APT1201R2BLLGMOSFET N-CH 1200V 12A TO247 |
3,474 | - |
|
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.2Ohm @ 6A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ||
APT14M120SMOSFET N-CH 1200V 14A D3PAK |
3,890 | - |
|
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 14A (Tc) | 10V | 1.1Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 4765 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ||
MSC70SM120JCU3SICFET N-CH 1.2KV 89A SOT227 |
2,772 | - |
|
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 395W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | |
MSCSM120DAM31CTBL1NGPM-MOSFET-SIC-SBD-BL1 |
3,495 | - |
|
Datasheet |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | |
APT10M19SVRGMOSFET N-CH 100V 75A D3PAK |
2,536 | - |
|
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 6120 pF @ 25 V | - | - | - | Surface Mount | |
APT6025BVRGMOSFET N-CH 600V 25A TO247 |
3,243 | - |
|
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Through Hole | |
APT38F80B2MOSFET N-CH 800V 41A T-MAX |
2,446 | - |
|
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT10050LVRGMOSFET N-CH 1000V 21A TO264 |
2,653 | - |
|
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | |
APT5010JVRMOSFET N-CH 500V 44A ISOTOP |
2,899 | - |
|
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Chassis Mount | |
MSC035SMA170SMOSFET SIC 1700V 35 MOHM TO-268 |
2,622 | - |
|
Datasheet |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 59A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
MSC080SMA120JS15MOSFET SIC 1200V 80 MOHM 15A SOT |
3,594 | - |
|
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | ||
APT50M50JVFRMOSFET N-CH 500V 77A ISOTOP |
3,166 | - |
|
Datasheet |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | Chassis Mount | |
APT37M100B2MOSFET N-CH 1000V 37A T-MAX |
2,943 | - |
|
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
APT47M60JMOSFET N-CH 600V 49A ISOTOP |
3,336 | - |
|
Datasheet |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |