制造商 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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2N6661MOSFET N-CH 90V 900MA TO39 |
880 | - |
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Datasheet |
Box | - | Active | N-Channel | MOSFET (Metal Oxide) | 90 V | 900mA (Tc) | 5V, 10V | 4mOhm @ 1A, 10V | 2V @ 1mA | - | ±40V | 50 pF @ 25 V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
2N6660MOSFET N-CH 60V 1.1A TO39 |
770 | - |
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Datasheet |
Box | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Tc) | 5V, 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±40V | 50 pF @ 25 V | - | 6.25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
BUZ50ATO 220 HV N-CHANNEL MOSFET |
2,768 | - |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole |