制造商 | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | Herst. Teil # | Verfügbarkeit | Preis | Menge | Datenblatt | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTE2960MOSFET-N-CHAN ENHANCEMENT |
113 | - |
|
Datasheet |
Bag | - | Active | 2 N-Channel | Standard | 900V | 7A | 2Ohm @ 3A, 10V | 4V @ 1mA | - | 1380pF @ 25V | 40W | -55°C ~ 150°C | Through Hole | |
NTE4007IC-CMOS DUAL COMPL. PAIR |
126 | - |
|
Datasheet |
Bag | - | Active | 3 N and 3 P-Channel | Standard | - | - | - | - | - | - | 500mW | -55°C ~ 125°C | - |