Transistoren-Bipolar (BJT-Arrays, Vorverzerrung)

制造商 Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType



















































































































































































































































































































































































































































全部重置
应用所有
结果:
Foto Herst. Teil # Verfügbarkeit Preis Menge Datenblatt Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) Resistor-Base(R1) Resistor-EmitterBase(R2) DCCurrentGain(hFE)(Min)@IcVce VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) Frequency-Transition Power-Max MountingType
NSBA144EDXV6T1G

NSBA144EDXV6T1G

NSBA144EDXV6 - DUAL PNP BIAS RES

Fairchild Semiconductor

3,538 -
NSBA144EDXV6T1G

Datasheet

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HEIM

HEIM

PRODUKT

PRODUKT

TELEFON

TELEFON

BENUTZER

BENUTZER